VCR4N Vishay, VCR4N Datasheet

no-image

VCR4N

Manufacturer Part Number
VCR4N
Description
Transistor
Manufacturer
Vishay
Datasheet

Specifications of VCR4N

Breakdown Voltage Vbr
-25V
Gate-source Cutoff Voltage Vgs(off) Max
-7V
No. Of Pins
3
Gate-source Breakdown Voltage
-25V
Mounting Type
Through Hole
Peak Reflow Compatible (260 C)
No
Transistor Polarity
N Channel
Rohs Compliant
No
DESCRIPTION
The VCR2N/4N/7N JFET voltage controlled resistors have an
ac drain-source resistance that is controlled by a dc bias
voltage (V
Minimum r
pinch-off voltage, r
FETs is intended for applications where the drain-source
voltage is a low-level ac signal with no dc component.
For applications information see AN105.
Document Number: 70293
S-41225—Rev. F, 28-Jun-04
PRODUCT SUMMARY
FEATURES
D Continuous Voltage-Controlled
D High Off-Isolation
D High Input Impedance
Part Number
Resistance
VCR2N
VCR4N
VCR7N
GS
DS
) applied to their high impedance gate terminal.
occurs when V
DS
rapidly increases. This series of junction
V
D
S
GS(off)
VCR2N, VCR4N
1
2
GS
TO-206AA
−7
−7
−5
Max (V)
(TO-18)
Top View
JFET Voltage-Controlled Resistors
= 0 V. As V
3
V
GS
(BR)GSS
approaches the
G and Case
BENEFITS
D Gain Ranging Capability/Wide Range
D No Circuit Interaction
D Simplified Drive
−25
−25
−25
Signal Attenuation
Min (V)
r
DS(on)
Key to device performance is the predictable r
versus V
These n-channel devices feature r
8000 W . All packages are hermetically sealed and may be
processed per MIL-S-19500 (see Military Information).
8000
600
Max (W)
60
GS
bias where:
D
S
r
DS
bias [
1
2
TO-206AF
Top View
(TO-72)
VCR7N
r
DS
APPLICATIONS
D Variable Gain Amplifiers
D Voltage Controlled Oscillator
D AGC
1–
(@ V
V
3
V
GS(off)
4
GS
GS
Vishay Siliconix
+ 0)
C
VCR2N/4N/7N
DS(on)
G
ranging from 20 to
www.vishay.com
DS
change
1

Related parts for VCR4N

VCR4N Summary of contents

Page 1

... This series of junction DS FETs is intended for applications where the drain-source voltage is a low-level ac signal with no dc component. TO-206AA (TO-18 Top View VCR2N, VCR4N For applications information see AN105. Document Number: 70293 S-41225—Rev. F, 28-Jun-04 V Min (V) r Max (W) (BR)GSS DS(on) −25 60 − ...

Page 2

... Output Characteristics (VCR4N −1.5 V −2.0 V −2.5 V −3 −4 GS(off 0 0.1 0.2 0.3 0.4 V − Drain-Source Voltage (V) DS Document Number: 70293 S-41225—Rev. F, 28-Jun-04 300_C ...

Page 3

... It is assumed that the output voltage is not so large as to push the VCR out of the linear resistance region, and that the r not shunted by the load. The lowest value which V V OUT VCR Since r DS VCR2N/4N/7N Vishay Siliconix = 0 V −0.5 V −1.0 V −1.5 V −2 ...

Page 4

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords