NE6510179A-T1 CALIFORNIA EASTERN LABS, NE6510179A-T1 Datasheet
NE6510179A-T1
Specifications of NE6510179A-T1
Available stocks
Related parts for NE6510179A-T1
NE6510179A-T1 Summary of contents
Page 1
... TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 5°C/W DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW with high linear gain, high efficiency, and excellent linearity ...
Page 2
... CH A 2.8 G COMP mA ±25 Note: 1. Recommended maximum gain compression is 3 > 4 150 °C -65 to +150 °C ORDERING INFORMATION PART NUMBER NE6510179A-T1-A NE6510179A-A 150 (° 25°C) C TYP MAX TEST CONDITIONS 35 1900 MHz 10.0 Pin = +25 dBm 100 Ω 200 mA (RF OFF) DSQ 1.2 31 ...
Page 3
TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN VOLTAGE 3 2.5 2.0 1.5 1.0 0 Drain Voltage ARRHENIUS PLOTS vs. JUNCTION TEMPERATURE 1.0E+07 1.0E+ 1.0 V 1.0E+ 1.0E+04 ...
Page 4
... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE6510179A 150 FREQUENCY S 11 GHz MAG ANG 0.50 0.956 179.67 0.60 0.955 177.71 0.70 0.956 175.93 0.80 0.955 174 ...
Page 5
... NE6510179A TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE6510179A 300 FREQUENCY S 11 GHz MAG ANG 0.50 0.964 179.30 0.60 0.963 177.40 0.70 0.964 175.60 0.80 ...
Page 6
... NE65XXX79A-EV 100637 .034 L = .890 L = .874 .010 W = .010 R1 NE6510179A L = .280 W = .050 TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1 100 pF CAP MURATA 0603 20 OHM RESISTOR ROHM CASE A 6.8 pF CAP ATC CASE A 4.3 pF CAP ATC CASE CAP ATC CASE A 4.7 pF CAP ATC CASE A 1.8 pF CAP ATC CASE B 4.7 µ ...
Page 7
... NE6510179A TYPICAL APPLICATION CIRCUIT PERFORMANCE at V PAE & GAIN vs. OUTPUT POWER Gain Gain, I PAE 1.96 GHz, DS PAE Output Power, P OUT GAIN & SATURATED POWER vs. FREQUENCY Gain for Gain OUT Gain for P SAT 1.90 1.92 1.94 1.96 1.98 Frequency, f (GHz) THIRD ORDER INTERMODULATION vs ...
Page 8
... GHz IS95 CDMA Output Power, P OUT ACPR2 1.25 MHz 50 100 mA 200 mA 55 400 mA 600 mA 800 (dBm) NE6510179A = 3 V and ACPR vs. OUTPUT POWER 1.96 GHz IS95 CDMA ACPR1 885 KHz I DSQ I DSQ I DSQ I DSQ I DSQ Output Power, P (dBm) OUT ACPR2 1.25 MHz ...
Page 9
NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.756 RG VTOSC 0 RD ALPHA 2 RS BETA 2.245 RGMET GAMMA 0 KF GAMMADC (2) 0. 1.7 TNOM DELTA 0 XTI VBI 0 ...
Page 10
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...