2N4858UB MICROSEMI, 2N4858UB Datasheet
2N4858UB
Manufacturer Part Number
2N4858UB
Description
Manufacturer
MICROSEMI
Datasheet
1.2N4858UB.pdf
(3 pages)
Specifications of 2N4858UB
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-40V
Drain Current (max)
80mA
Drain-gate Voltage (max)
40V
Drain-source Volt (max)
40V
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / Rohs Status
Not Compliant
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/385
Devices
2N4856
ABSOLUTE MAXIMUM RATINGS (T
(1) Derate linearly 2.06 mW/
(2) Derate linearly 10.3 mW/
ELECTRICAL CHARACTERISTICS (T
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
Operating Junction & Storage Temperature Range
Parameters / Test Conditions
Gate-Source Breakdown Voltage
Gate-Source “Off” State Voltage
Gate Reverse Current
Drain Current
V
V
V
V
V
GS
DS
DS
DS
DS
= 0, I
= 15 Vdc, I
= 0, V
= 0, V
= -10 Vds, V
Parameters / Test Conditions
G
GS
GS
2N4857
= 1.0 Adc
= -20 Vdc
= -15 Vdc
D
DS
= 0.5 Adc
= 15 Vdc
T
T
0
0
A
C
2N4858
C for T
C for T
= +25
= +25
0
0
A
C
C
C
> 25
> 25
(2)
(1)
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
C
0
0
C
2N4859
= +25
C.
C.
= 25
0
0
C unless otherwise noted)
C unless otherwise noted)
Symbol
T
V
V
V
j
, T
P
I
DG
GS
DS
G
T
2N4860
stg
2N4856
2N4857
2N4858
-40
40
40
-65 to +200
0.36
Symbol
V
1.8
V
2N4861
50
I
(BR)GSS
I
D(off)
GS(on)
GSS
TECHNICAL DATA
2N4859
2N4860
2N4861
-30
30
30
Min.
-4.0
-2.0
-0.8
-40
-30
Unit
mA
0
W
W
V
V
V
C
Max.
*See appendix A for
package outline
-0.25
-0.25
Qualified Level
0.25
-6.0
-4.0
-10
(TO-206AA)
JANTXV
JANTX
TO-18*
JAN
Page 1 of 2
Units
120101
Vdc
Vdc
A
A
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2N4858UB Summary of contents
Page 1
N-CHANNEL J-FET Qualified per MIL-PRF-19500/385 Devices 2N4856 2N4857 2N4858 ABSOLUTE MAXIMUM RATINGS (T Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation +25 C Operating Junction & Storage Temperature ...
Page 2
JAN SERIES ELECTRICAL CHARACTERISTICS (T Parameters / Test Conditions Drain Current Vdc GS DS Static Drain - Source “On” State Resistance 1.0 mAdc ...
Page 3
...