MX2N5116 MICROSEMI, MX2N5116 Datasheet
MX2N5116
Manufacturer Part Number
MX2N5116
Description
Manufacturer
MICROSEMI
Datasheet
1.MX2N5116.pdf
(2 pages)
Specifications of MX2N5116
Channel Type
P
Configuration
Single
Gate-source Voltage (max)
30V
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / Rohs Status
Not Compliant
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DEVICES
ABSOLUTE MAXIMUM RATINGS (T
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
Storage Temperature Range
(1) Symmetrical geometry allows operation of those units with source / drain leads interchanged.
(2) Derate linearly 3.0 mW/°C for T
ELECTRICAL CHARACTERISTICS (T
Parameters / Test Conditions
Gate-Source Breakdown Voltage
V
Drain-Source “On” State Voltage
V
V
V
Gate Reverse Current
V
Drain Current Cutoff
V
V
V
Zero Gate Voltage Drain Current
V
V
V
Gate-Source Cutoff
V
V
V
T4-LDS-0006 Rev. 1 (063387)
DS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
= 0, I
= 0V dc, I
= 0V dc, I
= 0V dc, I
= 0, V
= 12V dc, V
= 7.0V dc, V
= 5.0V dc, V
= 0, V
= 0, V
= 0, V
= -15, I
= -15, I
= -15, I
G
GS
DS
DS
DS
= 1.0 μA dc
D
D
D
= 20V dc
= -18V dc
= -15V dc
= -15V dc
= -1.0nA dc
= -1.0nA dc
= -1.0nA dc
D
D
D
Parameters / Test Conditions
= -15mA dc
= -7.0mA dc
= -3.0mA dc
DS
DS
DS
2N5114
2N5115
2N5116
= -15V dc
= -15V dc
= -15V dc
(1)
(1)
T
A
= +25°C
A
> 25°C.
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
(2)
C
A
= +25°C unless otherwise noted)
= +25°C, unless otherwise noted)
Equivalent To MIL-PRF-19500/476
Symbol
V
V
V
P-CHANNEL J-FET
I
(BR)GSS
I
I
D(off)
GS(off)
DS(on)
GSS
DSS
Symbol
V
V
V
T
P
I
GS
DS
DG
G
stg
T
TECHNICAL DATA SHEET
Min.
-5.0
-30
-15
5.0
3.0
1.0
30
All Devices
-65 to +200
0.500
30
30
30
50
Max.
-500
-500
-500
-1.3
-0.8
-0.6
500
-90
-60
-25
6.0
4.0
10
mAdc
mAdc
pAdc
pAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
°C
W
MQ = JAN Equivalent
MX = JANTX Equivalent
MV = JANTXV Equivalent
(TO-206AA)
LEVELS
TO-18
Page 1 of 2
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MX2N5116 Summary of contents
Page 1
... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DEVICES 2N5114 2N5115 2N5116 ABSOLUTE MAXIMUM RATINGS (T Parameters / Test Conditions (1) Gate-Source Voltage (1) Drain-Source Voltage Drain-Gate Voltage Gate Current (2) Power Dissipation T = +25°C A Storage Temperature Range (1) Symmetrical geometry allows operation of those units with source / drain leads interchanged. ...
Page 2
... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Drain-Source “On” State Resistance -1.0mA Small-Signal Drain-Source “On” State Resistance 1kHz GS D Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance V = 12V dc 7.0V dc, V ...