IXA60IF1200NA IXYS, IXA60IF1200NA Datasheet
IXA60IF1200NA
Specifications of IXA60IF1200NA
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IXA60IF1200NA Summary of contents
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... 1200 V CEK V = 900 ± Ω non-repetitive G Data according to IEC 60747and per diode unless otherwise specified IXA60IF1200NA C25 1200 CES V 1 CE(sat)typ Package: ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ● ...
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... IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Conditions T = 25° ° 600 / 1200 A/µ Data according to IEC 60747and per diode unless otherwise specified IXA60IF1200NA Ratings min. typ. max 25°C 1.95 2 125 °C 1. 125 °C VJ 350 2.5 0.6 Ratings min ...
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... IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Conditions second minute Part Name Marking on Product IXA60IF1200NA Data according to IEC 60747and per diode unless otherwise specified IXA60IF1200NA Ratings min. typ. -55 -40 0.10 1.1 1.1 3000 ...
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... DIN 7985 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified IXA60IF1200NA SYM MILLIMETERS INCHES MIN MAX MIN MAX A 31.50 31.88 1.240 1.255 B 7.80 8.20 .307 ...
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... I [A] C Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved = 125° off 100 120 Data according to IEC 60747and per diode unless otherwise specified IXA60IF1200NA 100 125° [A] ...
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... RM 120 thJC 0 [K/W] 0.01 1100 1200 1300 versus di/dt rec Data according to IEC 60747and per diode unless otherwise specified IXA60IF1200NA 125° 600 600 700 800 900 1000 1100 di /dt [A/µs] F Fig. 8 Typ. reverse recov.charge Q ...