APT50GT120JU2 MICROSEMI, APT50GT120JU2 Datasheet - Page 3

• Manufacturer Part Number: APT50GT120JU2
• Manufacturer: MICROSEMI

Specifications of APT50GT120JU2

• Lead Free Status / Rohs Status: Compliant

Chopper diode ratings and characteristics
Thermal and package characteristics
Symbol
Symbol Characteristic
T
Typical IGBT Performance Curve
Torque
V
R
R
J
I
I
,T
I
RRM
RRM
Wt
V
C
Q
Q
T
ISOL
thJA
RM
t
t
thJC
rr
rr
L
T
F
rr
rr
STG
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque
Package Weight
Characteristic
Diode Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Operating Frequency vs Collector Current
60
50
40
30
20
10
0
0
www.microsemi.com
10
Test Conditions
I
I
I
V
V
V
I
di/dt =100A/µs
I
V
di/dt =200A/µs
I
V
di/dt =1000A/µs
F
F
F
F
F
F
=1A,V
R
R
R
R
R
20 30
= 30A
= 60A
= 30A
= 30A
= 30A
= 1200V
= 1200V
= 200V
= 800V
= 800V
R
I
C
=30V
40 50
(A)
V
D=50%
R
T
J
CE
G
=125°C
=18 Ω
60
=600V
T
T
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
Diode
j
j
j
j
j
= 125°C
70 80
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
IGBT
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
APT50GT120JU2
2500
Min
-55
Min
29.2
3450
4650
Typ
Typ
370
500
660
220
2.0
2.3
1.8
32
31
12
37
5
Max
0.36
150
300
Max
1.1
1.5
20
250
500
2.5
°C/W
Unit
Unit
N.m
µA
°C
pF
nC
nC
V
ns
ns
V
A
A
g
3 - 7