HL6312G-A Opnext, HL6312G-A Datasheet
HL6312G-A
Specifications of HL6312G-A
Related parts for HL6312G-A
HL6312G-A Summary of contents
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... AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high reliability. ...
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... HL6312G/13G Typical Characteristic Curves Optical Output Power vs. Forward Current Forward current, I Slope Efficiency vs. Case Temperature 0.5 0.4 0.3 0.2 0 Case temperature, T Lasing Wavelength vs. Case Temperature 646 644 642 640 638 636 634 632 630 Case temperature, T Rev.0 Aug. 01, 2008 page Threshold Current vs. Case Temperature ...
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... HL6312G/13G Package Dimensions Rev.0 Aug. 01, 2008 page 9.0 –0.025 1.0 ± 0.1 (0.65) +0.3 7.2 –0.2 6.2 ± 0.2 ( 2.0) Emitting Point 3 – 0.45 ± 0 2.54 ± 0.35 OPJ Code JEDEC JEITA Mass (reference value July, 2002 Unit: mm LD/G2 — — ...
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... HL6312G/13G Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...