NTE5679 NTE Electronics, Inc., NTE5679 Datasheet
NTE5679
Manufacturer Part Number
NTE5679
Description
TRIAC; TO-3; 600 V; 200 mA @ 25 degC/5 mA @ 125 degC; 40 A @ 0 degC to 125 degC;
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5679.pdf
(2 pages)
Specifications of NTE5679
Current, Dc Gate-trigger
100 mA
Current, Dc Holding
120 mA
Current, Off-state, Peak
200 mA @ 25°C⁄5 mA @ 125°C
Current, On-state, Rms, Maximum
40 A @ 0°C to 125°C
Current, Surge, Non-repetitive Peak Forward
664 A^2 Sec
Dissipation, Gate-power, Average
800 mW
Package Type
TO-3
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
0 °C
Voltage, Dc Gate-trigger
2.5 V @ 25°C⁄0.2 V @ +125°C
Voltage, Repetitive Peak Off State
600
Lead Free Status / Rohs Status
RoHS Compliant part
Description
The NTE5679 TRIAC may be gate triggered from a blocking to conduction state for either polarity of
applied voltage and is designed for AC switching and phase control applications such as speed and
temperature modulation controls, lighting controls, and static switching relays. The triggering signal
is normally applied between the gate and MT
Electrical Characteristics: (All measurements are at T
Repetitive Peak Blocking Voltage (Note 1), V
RMS On−State Current (Conduction Angle of 360 , T
Peak Off−State Current (V
Peak One−Cycle Surge Current, I
Non−Repetitive RMS Surge On−State Current for Fusing (I
Maximum DC Gate Trigger Current (V
Maximum DC gate Trigger Voltage (V
Peak On−State Voltage (I
DC Holding Current (gate Open, Note 1, Note 3), I
Peak Gate Trigger Current (Pulse Width
Peak Gate Power Dissipation (Pulse Width
Average Gate Power Dissipation, P
Minimum Critical Rate of Rise of Off−State Voltage (V
Minimum Critical Rate of Rise of Commutation Voltage (Note 1), dv/dt
Maximum Rate of Change of On−State Current (I
Maximum Gate Controlled Turn−On Time (I
Operating Temperature Range, T
Storage Temperature Range, T
Note 1. For either polarity of MT
Note 2. For either polarity of gate voltage (V
Note 3. Initial On−State Current = 400mA (DC).
T
T
50Hz
60Hz
T
T
T
T
(V
C
C
C
C
C
C
DRM
= +25 C
= +125 C
= +25 C
= +125 C
= +100 C
= +125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 600V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
T(RMS)
DRM
otherwise specified)
= 40A, Commutating di/dt = 21.6A/msec, Gate Unenergized) 4V/ s
stg
= 600V, Gate Open, Note 1), I
= 40A, T
2
J
TSM
with reference to MT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
TRIAC − 600V, 40A
D
D
= 12V, Quad I, II, III. Note 2), V
= 12V, Quad I, II, III), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 s), I
NTE5679
= +25 C, Note 1), V
GT
DRM
GT
1
10 s), P
.
= 500mA, Rise Time = 0.1 s), t
) with reference to MT
GT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
H
GTM
= 200mA, Rise Time = 0.1 s), di/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
DRM
GM
A
= 0 to +125 C), I
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, 60Hz with a resistive load unless
terminal.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 600V, Gate Open, Note 1), dv/dt
GT
DRM
= 500mA, 8.3ms), I
GT
TM
. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
1
(c)
GT
terminal.
T(RMS)
gt
. . . . . . . . . . . .
. . . . . . . . . . . .
2
t
−20 to +125 C
. . . .
0 to +125 C
.
664A
375V/ s
250V/ s
150A/ s
800mW
200mA
100mA
120mA
600V
335A
400A
5mA
2.5V
0.2V
1.8V
40W
2
40A
5 s
sec
4A
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NTE5679 Summary of contents
Page 1
... Description The NTE5679 TRIAC may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the gate and MT ...
Page 2
MT .465 (11. .587 (14.9) 1.543 (39.2) .319 (8.1) All Dimensions are Max .169 (4.3) Dia (2 Holes) 2 .906 (23.0) Gate .780 (19.8) .331 (8.4) .106 (2.7) ...