NTE53 NTE Electronics, Inc., NTE53 Datasheet
NTE53
Manufacturer Part Number
NTE53
Description
Transistor; NPN; 400 V; 9 V; 15 A; 10 A; 175 W; 1 degC/W; 300 V (Min.); 6; 30
Manufacturer
NTE Electronics, Inc.
Type
Driver, High Voltage, Switchr
Datasheet
1.NTE53.pdf
(3 pages)
Specifications of NTE53
Complement To
PNP
Current, Base
10 A
Current, Collector
15 A
Current, Collector Cutoff
1 mA
Current, Gain
60
Device Dissipation
175 W
Frequency
28 MHz
Gain, Dc Current, Maximum
30
Gain, Dc Current, Minimum
6
Material Type
Silicon
Package Type
TO-3
Polarity
NPN
Power Dissipation
175 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1 °C/W
Temperature, Operating, Maximum
+200 °C
Temperature, Operating, Minimum
-65 °C
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Base
850
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Emitter To Base
9 V
Voltage, Saturation, Collector To Emitter
5 V
Voltage, Sustaining, Collector To Emitter
300 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
115V and 220V line - operated switch - mode appliations.
Applications:
D Switching Regulators
D PWM Inverters and Motor Controls
D Deflection Circuits
D Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector - Emitter Voltage, V
Collector - Emitter Voltage, V
Collector - Emitter Voltage, V
Emitter - Base Voltage, V
Collector Current, I
Base Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperatur Range, T
Storage Temperatur Range, T
Thermal Resistance, Junction - to - Case, R
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Derate Above 25 C
B
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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EB
High Voltage, High Speed Switch
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
CEX(sus)
CEV
= +25 C), P
= +100 C), P
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
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D
J
D
thJC
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NTE53
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
L
. . . . . . . . . . . . . . .
- 65 to +200 C
- 65 to +200 C
1.0W/ C
1.0 C/W
+275 C
175W
100W
400V
450V
850V
15A
30A
10A
20A
9V
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NTE53 Summary of contents
Page 1
... High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V line - operated switch - mode appliations. ...
Page 2
Electrical Charactetristics: (T Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ...
Page 3
Max .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) Base .875 (22.2) Dia Max .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max Collector/Case Seating Plane ...