1N5061GP-E3/54 General Semiconductor / Vishay, 1N5061GP-E3/54 Datasheet

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1N5061GP-E3/54

Manufacturer Part Number
1N5061GP-E3/54
Description
Diode, Glass passivated; 1A IF; 1.2 V (MAX.); 600V; 50A Ifms; 150uA IR; DO-204AC
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of 1N5061GP-E3/54

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5061GP-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
Standard Avalanche Sinterglass Diode
Features
Applications
Rectification diode, general purpose
Parts Table
Absolute Maximum Ratings
T
Document Number 86000
Rev. 1.5, 13-Apr-05
• Controlled avalanche characteristics
• Glass passivated
• Low reverse current
• High surge current loading
• Hermetically sealed axial-leaded glass envelope
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
1N5059
1N5060
1N5061
1N5062
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Max. pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
Part
see electrical characteristics
t
R
R
I
p
(BR)R
thJA
thJA
= 10 ms, half-sinewave
= 45 K/W, T
= 100K/W, T
= 1 A, indicutive load
Test condition
V
V
V
V
R
R
R
R
= 200 V; I
= 400 V; I
= 600 V; I
= 800 V; I
amb
amb
= 50 °C
= 75 °C
Type differentiation
FAV
FAV
FAV
FAV
e2
= 2 A
= 2 A
= 2 A
= 2 A
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
1N5059
1N5060
1N5061
1N5062
Part
V
V
V
V
1N5059 to 1N5062
T
R
R
R
R
Symbol
j
= V
= V
= V
= V
I
I
I
= T
FSM
SOD-57
SOD-57
SOD-57
SOD-57
E
FAV
FAV
R
RRM
RRM
RRM
RRM
stg
Vishay Semiconductors
- 55 to + 175
Value
200
400
600
800
0.8
50
20
Package
2
www.vishay.com
Unit
mJ
°C
V
V
V
V
A
A
A
1

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1N5061GP-E3/54 Summary of contents

Page 1

Standard Avalanche Sinterglass Diode Features • Controlled avalanche characteristics • Glass passivated • Low reverse current • High surge current loading • Hermetically sealed axial-leaded glass envelope • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE ...

Page 2

Vishay Semiconductors Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient Lead length mm constant board with spacing 25 mm Electrical Characteristics T = ...

Page 3

RRM 1.8 half sinewave 1.6 1 K/W thJA l =10 mm 1.2 1.0 0.8 0 100 K/W 0.4 thJA PCB 0.2 0 ...

Page 4

Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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