1N5061GP-E3/54 General Semiconductor / Vishay, 1N5061GP-E3/54 Datasheet

1N5061GP-E3/54

Manufacturer Part Number

1N5061GP-E3/54

Description

Diode, Glass passivated; 1A IF; 1.2 V (MAX.); 600V; 50A Ifms; 150uA IR; DO-204AC

Manufacturer

General Semiconductor / Vishay

Datasheet

1.1N5061GP-E354.pdf (5 pages)

Specifications of 1N5061GP-E3/54

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

1N5061GP-E3/54

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Standard Avalanche Sinterglass Diode

Features

Applications

Rectification diode, general purpose

Parts Table

Absolute Maximum Ratings

Document Number 86000

Rev. 1.5, 13-Apr-05

• Controlled avalanche characteristics

• Glass passivated

• Low reverse current

• High surge current loading

• Hermetically sealed axial-leaded glass envelope

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

1N5059

1N5060

1N5061

1N5062

Reverse voltage = Repetitive

peak reverse voltage

Peak forward surge current

Average forward current

Junction and storage

temperature range

Max. pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

amb

and WEEE 2002/96/EC

= 25 °C, unless otherwise specified

Parameter

Part

see electrical characteristics

(BR)R

thJA

= 10 ms, half-sinewave

= 45 K/W, T

= 100K/W, T

= 1 A, indicutive load

Test condition

= 200 V; I

= 400 V; I

= 600 V; I

= 800 V; I

amb

= 50 °C

= 75 °C

Type differentiation

FAV

= 2 A

Mechanical Data

Case: SOD-57 Sintered glass case

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: approx. 369 mg

1N5059

1N5060

1N5061

1N5062

Part

1N5059 to 1N5062

Symbol

= V

= T

FSM

SOD-57

FAV

RRM

stg

Vishay Semiconductors

- 55 to + 175

Value

200

400

600

800

0.8

Package

www.vishay.com

Unit

°C

Related parts for 1N5061GP-E3/54

1N5061GP-E3/54 Summary of contents

Page 1

Standard Avalanche Sinterglass Diode Features • Controlled avalanche characteristics • Glass passivated • Low reverse current • High surge current loading • Hermetically sealed axial-leaded glass envelope • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE ...

Page 2

Vishay Semiconductors Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient Lead length mm constant board with spacing 25 mm Electrical Characteristics T = ...

Page 3

RRM 1.8 half sinewave 1.6 1 K/W thJA l =10 mm 1.2 1.0 0.8 0 100 K/W 0.4 thJA PCB 0.2 0 ...

Page 4

Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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