NTE2395 NTE Electronics, Inc., NTE2395 Datasheet
NTE2395
Manufacturer Part Number
NTE2395
Description
MOSFET; N-Ch; VDSS 60V; RDS(ON) 0.028Ohm; ID 50A; TO-220; PD 150W; VGS +/-20V; gFS 15Mho
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2395.pdf
(3 pages)
Specifications of NTE2395
Channel Type
N-Channel
Current, Drain
50 A
Fall Time
92 ns (Typ.)
Gate Charge, Total
67 nC
Operating And Storage Temperature
-55 to +175 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
0.028 Ohm
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
110 ns (Typ.)
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
15 Mhos
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
2.5 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Features:
D Dynamic dv/dt Rating
D +175 C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
Pulsed Drain Current (Note 2), I
Power Dissipation (T
Gate–to–Source Voltage, V
Single Pulse Avalanche Energy (Note 3), E
Peak Diode Recovery dv/dt (Note 4), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6–32 or M3 Screw)
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
Note 1. Current limited by the package, (Die Current = 51A).
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. V
Note 4. I
T
T
Derate Linearly Above 25 C
C
C
SD
= +25 C (Note 1)
= +100 C
DD
= 25V, starting T
51A, di/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25 C), P
250A/ s, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
J
N–Ch, Enhancement Mode
stg
= +25 C, L = 44 H, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V), I
DM
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
thJC
V
NTE2395
MOSFET
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
G
J
= 25 , I
+175 C
AS
= 51A
L
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
10 lbfin (1.1Nm)
–55 to +175 C
–55 to +175 C
1.0W/ C
1.0 C/W
0.5 C/W
62 C/W
4.5V/ns
+300 C
100mJ
150W
200A
50A
36A
20V
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NTE2395 Summary of contents
Page 1
... Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R Note 1. Current limited by the package, (Die Current = 51A). Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 25V, starting T DD Note 4. I 51A, di/dt 250A NTE2395 MOSFET N–Ch, Enhancement Mode High Speed Switch = 10V ...
Page 2
Electrical Characteristics: (T Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...