NTE287 NTE Electronics, Inc., NTE287 Datasheet
NTE287
Manufacturer Part Number
NTE287
Description
Transistor; TO92; NPN; 300; 300; 6 V; 500 mA; 1.5 W; -55 to 150 degC; 200 mW/ d
Manufacturer
NTE Electronics, Inc.
Type
General Purpose, High Voltager
Datasheet
1.NTE287.pdf
(2 pages)
Specifications of NTE287
Complement To
PNP
Current, Collector
500 mA
Current, Collector Cutoff
0.1 μA
Current, Continuous Collector
500 mA
Current, Gain
40
Device Dissipation
0.625 W
Frequency
50 MHz
Gain, Dc Current, Minimum
40
Material Type
Silicon
Package Type
TO-92
Polarity
NPN
Power Dissipation
625 mW
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/mW
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
200 °C/mW
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Base
300 V
Voltage, Breakdown, Collector To Emitter
300 V
Voltage, Breakdown, Emitter To Base
6 V
Voltage, Collector To Base
300 V
Voltage, Collector To Emitter
300 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation @ T
Total Device Dissipation @ T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
NTE288
NTE288
NTE288
NTE287
NTE287
NTE287
NTE287
NTE288
Derate Above +25 C
Derate Above +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage, General Purpose Amplifier
Silicon Complementary Transistors
EBO
CBE
NTE287 (NPN) & NTE288 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
C
= +25 C, P
= +25 C, P
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CBO
EBO
D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
I
I
I
V
V
V
C
C
E
CB
EB
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100 A, I
= 1mA, I
= 100 A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200V, I
= 6V, I
= 3V, I
Test Conditions
C
C
B
2%.
= 0
= 0
= 0, Note 1
C
E
E
= 0
= 0
= 0
Min
300
300
6
5
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–55 to +150 C
–55 to +150 C
83.3 C/mW
Max Unit
0.25
0.1
0.1
0.1
200 C/mW
–
–
–
–
12mW/ C
5mW/ C
625mW
500mA
300V
300V
1.5W
V
V
V
V
A
A
A
A
6V
5V
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NTE287 Summary of contents
Page 1
... NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector–Base Voltage, V CBE Emitter–Base Voltage, V EBO NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain NTE287 & NTE288 NTE287 NTE288 Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain – Bandwidth Product Collector–Base Capacitance NTE287 NTE288 Note 1. Pulse Test: Pulse Width ...