FB180SA10P Vishay PCS, FB180SA10P Datasheet
FB180SA10P
Manufacturer Part Number
FB180SA10P
Description
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.0065Ohm; ID 180A; SOT-227; PD 480W; VGS +/-20
Manufacturer
Vishay PCS
Datasheet
1.FB180SA10P.pdf
(3 pages)
Specifications of FB180SA10P
Current, Drain
180 A
Gate Charge, Total
250 nC
Package Type
SOT-227
Polarization
N-Channel
Power Dissipation
480 W
Resistance, Drain To Source On
0.0065 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
181 ns
Time, Turn-on Delay
45 ns
Transconductance, Forward
93 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FB180SA10P
Manufacturer:
VISHAY
Quantity:
340
Part Number:
FB180SA10P
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
(1)
(2)
(3)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Continuous drain current at V
Pulsed drain current
Power dissipation
Linear derating factor
Gate to source voltage
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Peak diode recovery dV/dt
Operating junction and storage temperature range
Insulation withstand voltage (AC-RMS)
Mounting torque
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Starting T
I
SD
≤ 180 A, dI/dt ≤ 83 A/µs, V
J
R
I
V
D
= 25 °C, L = 43 µH, R
DS(on)
DSS
DC
SOT-227
GS
DD
10 V
g
≤ V
= 25 Ω, I
(BR)DSS
0.0065 Ω
AS
, T
Power MOSFET, 180 A
100 V
180 A
= 180 A (see fig. 12)
J
≤ 150 °C
SYMBOL
HEXFET
dV/dt
T
E
E
I
I
DM
AR
J
V
V
AS
AR
, T
P
I
ISO
GS
D
D
(1)
(1)
(2)
(1)
Stg
(3)
T
T
T
M4 screw
FEATURES
• Fully isolated package
• Easy to use and parallel
• Very low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Totally lead (Pb)-free
DESCRIPTION
5th Generation, high current density HEXFETs
into a compact, high power module providing the best
combination of switching, ruggedized design, very low on
resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
and easy connection to the SOT-227 package contribute to
its universal acceptance throughout the industry.
C
C
C
TEST CONDITIONS
= 25 °C
= 100 °C
= 25 °C
®
Vishay High Power Products
- 55 to + 150
MAX.
± 20
180
120
720
480
700
180
2.7
5.7
2.5
1.3
48
FB180SA10P
®
are paralled
UNITS
W/°C
V/ns
Nm
mJ
mJ
kV
°C
W
A
V
A
RoHS
COMPLIANT
1
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FB180SA10P Summary of contents
Page 1
... 100 ° ° ( ( ( (3) dV/ Stg V ISO M4 screw = 180 A (see fig. 12) AS ≤ 150 ° FB180SA10P Vishay High Power Products RoHS COMPLIANT ® are paralled MAX. UNITS 180 120 A 720 480 W 2.7 W/°C ± 700 mJ 180 5.7 V/ 150 °C 2 ...
Page 2
... FB180SA10P Vishay High Power Products THERMAL RESISTANCE PARAMETER Junction to case Case to sink, flat, greased surface ELECTRICAL CHARACTERISTICS (T PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current Gate to source forward leakage ...
Page 3
... ORDERING INFORMATION TABLE Device code CIRCUIT CONFIGURATION ® HEXFET Power MOSFET, 180 180 ® - HEXFET Power MOSFET - Generation 5 HEXFET MOSFET silicon DBC construction - Current rating (180 = 180 A) - Single switch - SOT-227 - Voltage rating (10 = 100 Lead (Pb)-free D (3) G (2) S (1-4) FB180SA10P Vishay High Power Products ...