NTE46 NTE Electronics, Inc., NTE46 Datasheet
NTE46
Manufacturer Part Number
NTE46
Description
Transistor; TO92; NPN; 100; 100; 12 V; 500 mA; 625 mW; -55 to 150 degC; 200 de
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Driverr
Datasheet
1.NTE46.pdf
(2 pages)
Specifications of NTE46
Current, Continuous Collector
500 mA
Current, Gain
10000
Current, Output
500 mA
Device Dissipation
625 mW
Gain, Dc Current, Minimum
10000
Package Type
TO-92
Polarity
NPN
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
83.3
Resistance, Thermal, Junction To Case
83.3 °C⁄W
Temperature Range, Junction, Operating
-55 to +150
Thermal Resistance, Junction To Ambient
200 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
100 V
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Breakdown, Emitter To Base
12 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Emitter To Base
12 V
Voltage, Input
12 V
Voltage, Output
100 V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Voltage
Emitter Cutoff Current
Voltage
Derate Above 25 C
Derate Above 25 C
Parameter
Darlington, General Purpose Amplifier,
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CES
(BR)CBO
(BR)EBO
I
I
I
CBO
CES
EBO
Preamp, Driver
D
D
J
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
NTE46
CB
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
= 10 A, I
= 100 A, V
= 100 A, I
= 10V, I
= 80V, I
= 80V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
C
E
E
BE
= 0
BE
= 0
= 0
= 0
= 0
= 0
Min
100
100
12
–
–
–
Typ
–
–
–
–
–
–
–55 to +150 C
–55 to +150 C
Max Unit
100
500
100
–
–
–
12mW/ C
83.3 C/W
200 C/W
5mW/ C
625mW
500mA
100V
100V
1.5W
nA
nA
nA
V
V
V
12V
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NTE46 Summary of contents
Page 1
... Emitter–Base Breakdown Voltage Collector Cutoff Voltage Emitter Cutoff Current NTE46 Silicon NPN Transistor Preamp, Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Note 1. Pulse Test: Pulse Width f Note ...