NTE2014 NTE Electronics, Inc., NTE2014 Datasheet
NTE2014
Manufacturer Part Number
NTE2014
Description
Array, Darlington; DIP; 7-Channel Darlington Array/Driver; 50; 30; 500 mA; 2 W
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2013.pdf
(3 pages)
Specifications of NTE2014
Current, Collector
500 mA
Current, Leakage Output
500 uA
Input Capacitance
15 pF (Typ.)
Package Type
DIP
Power Dissipation
2 W
Temperature, Range, Operating Ambient
-20 to 85 °C
Time, Turn-off Delay
0.25 μs (Typ.)
Time, Turn-on Delay
0.25 μs (Typ.)
Transistor Type
7-Channel Darlington Array⁄Driver
Voltage, Input
30 V
Voltage, Output
50 V
Voltage, Saturation, Collector To Emitter
1.3 V (Typ.)
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP
type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub-
strate. All units have open–collector outputs and integral diodes for inductive load transient suppres-
sion.
Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are
permissible, making them ideal for driving tungstun filament lamps.
The NTE2011 is a general purpose array that may be used with standard bi–polar digital logic using
external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs
opposite inputs to facilitate printed wiring board layouts.
The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and
resistor in series to limit the input current to a safe value in that application. The Zener diode also gives
this device excellent noise immunity.
The NTE2013 has a 2.7k series base resistor for each Darlington pair, allowing operation directly
with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface
needs – particularly those beyond the capabilities of standard logic buffers.
The NTE2014 has a 10.5k series input resistor that permits operation directly from CMOS or PMOS
outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2013,
while the required input voltage is less than that required by the NTE2012.
The NTE2015 is designed for use with standard TTL and Schottky TTL, with which higher output cur-
rents are required and loading of the logic output is not a concern. This device will sink a minimum
of 350mA when driven from a “totem pole” logic output.
Absolute Maximum Ratings: (T
Output Voltage, V
Input Voltage, V
Continuous Collector Current. I
Continuous Input Current, I
Power Dissipation, P
Operating Ambient Temperature Range, T
Storage Temperature Range, T
Note 1. The NTE2015 is a discontinued device and no longer available.
Note 2. Derate at the rate of 16.6mW/ C above +25 C.
Note 3. Under normal operating conditions, these devices will sustain 350mA per output with
NTE2012, NTE2013, NTE2014
NTE2015
NTE2011, NTE2013, NTE2014
NTE2012, NTE2015
One Darlington Pair
Total Device (Note 1)
V
CE(sat)
NTE2011/NTE2012/NTE2013/NTE2014/NTE2015
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1.6V at +70 C with a pulse width of 20ms and a duty cycle of 34%.
CE
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7–Channel Darlington Array/Driver
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
= +25 C for any one Darlington pair unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Integrated Circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55 to +150 C
–20 to +85 C
500mA
600mA
25mA
50V
30V
15V
1W
2W
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NTE2014 Summary of contents
Page 1
... TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface needs – particularly those beyond the capabilities of standard logic buffers. The NTE2014 has a 10.5k series input resistor that permits operation directly from CMOS or PMOS outputs utilizing supply voltages 15V. The required input current is below that of the NTE2013, while the required input voltage is less than that required by the NTE2012 ...
Page 2
... Turn–On Delay Turn–Off Delay Clamp Diode Leakage Current Clamp Diode Forward Voltage = +25 unless otherwise specified) A Symbol Device Test Conditions I All V = 50V, T CEX 50V NTE2012 V = 50V NTE2014 V = 50V NTE2011 I = 100mA, I CE(sat) C NTE2013 I = 200mA NTE2014 NTE2014 I = 350mA NTE2012 I = 200mA NTE2015 I = 350mA, I ...
Page 3
Pin Connection Diagram Input 1 1 Input 2 2 Input 3 3 Input 4 4 Input 5 5 Input 6 6 Input 7 7 GND .870 (22.0) Max .100 (2.54) .700 (17.78) 16 Output 1 15 Output ...