HFA08TB60PBF Vishay PCS, HFA08TB60PBF Datasheet

HFA08TB60PBF

Manufacturer Part Number

HFA08TB60PBF

Description

600V 8A HEXFRED DISCRETE DIODE IN A TO-220AC PACKAGE

Manufacturer

Vishay PCS

Datasheet

1.HFA08TB60PBF.pdf (6 pages)

Specifications of HFA08TB60PBF

Capacitance, Junction

10 pF

Configuration

Common Cathode

Current, Forward

8 A

Current, Surge

60 A

Package Type

TO-220AC

Power Dissipation

36 W

Primary Type

Rectifier

Resistance, Thermal, Junction To Case

3.5 K/W

Speed, Switching

Ultrafast

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Time, Recovery

18 ns

Voltage, Forward

1.7 V

Voltage, Reverse

600 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

HFA08TB60PBF

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

HFA08TB60PBF

Quantity:

10 000

Company:

H&T Electronics

Part Number:

HFA08TB60PBF

Quantity:

70 000

Company:

H&T Electronics

Part Number:

HFA08TB60PBF

Quantity:

70 000

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* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94047

Revision: 25-Jul-08

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

(rec)M

at 8 A at 25 °C

(maximum)

(typical)

/dt (typical)

F(AV)

RRM

Cathode

TO-220AC

cathode

Base

Ultrafast Soft Recovery Diode, 8 A

Anode

For technical questions, contact: diodes-tech@vishay.com

240 A/µs

150 °C

600 V

65 nC

18 ns

1.7 V

5.0 A

8 A

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

TEST CONDITIONS

= 100 °C

= 25 °C

= 100 °C

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA08TB60 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 600 V and 8 A continuous current, the HFA08TB60

is especially well suited for use as the companion diode for

IGBTs and MOSFETs. In addition to ultrafast recovery time,

the HEXFRED

peak recovery current (I

tendency to “snap-off” during the t

HEXFRED features combine to offer designers a rectifier

with lower noise and significantly lower switching losses in

both the diode and the switching transistor. These

HEXFRED advantages can help to significantly reduce

snubbing, component count and heatsink sizes. The

HEXFRED HFA08TB60 is ideally suited for applications in

power supplies and power conversion systems (such as

inverters), motor drives, and many other similar applications

where high speed, high efficiency is needed.

RRM

Vishay High Power Products

product line features extremely low values of

- 55 to + 150

RRM

VALUES

600

HFA08TB60PbF

) and does not exhibit any

portion of recovery. The

www.vishay.com

UNITS

°C

RoHS*

COMPLIANT

Available

Related parts for HFA08TB60PBF

HFA08TB60PBF Summary of contents

Page 1

... FSM I FRM ° 100 ° Stg For technical questions, contact: diodes-tech@vishay.com HFA08TB60PbF Vishay High Power Products RRM rr ® product line features extremely low values of ) and does not exhibit any RRM portion of recovery. The b VALUES UNITS 600 150 °C www.vishay.com ...

Page 2

... HFA08TB60PbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C Series inductance L S DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL t rr Reverse recovery time t rr1 t rr2 I RRM1 Peak recovery current ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.001 0. Rectangular Pulse Duration (s) 1 thJC For technical questions, contact: diodes-tech@vishay.com HFA08TB60PbF Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° 0 °C J 0.01 0.001 0 100 ...

Page 4

... HFA08TB60PbF Vishay High Power Products 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery Diode 1000 /dt F 1000 /dt F For technical questions, contact: diodes-tech@vishay.com ...

Page 5

... I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com HFA08TB60PbF Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM rr t ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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