NTE250 NTE Electronics, Inc., NTE250 Datasheet
NTE250
Manufacturer Part Number
NTE250
Description
Transistor; PNP; Silicon; TO3; 100 V; 100 V; 5 V; 16 A; 500 mA; 150 W; NPN
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE249.pdf
(2 pages)
Specifications of NTE250
Complement To
NPN
Current, Base
500 mA
Current, Continuous Collector
16 A
Current, Gain
1000
Current, Input
500 mA
Current, Output
16 A
Current, Output, Leakage
3
Material Type
Silicon
Package Type
TO-3
Polarity
PNP
Power Dissipation
150 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.17 °C⁄W
Temperature Range, Junction, Operating
-55 to 200 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
100 V (Min.)
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
5 V
Voltage, Input
5 V
Voltage, Output
100 V
Voltage, Saturation, Collector To Emitter
4.0 V (Max.) @ IC == 16A, IB == 80mA
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE2508
Manufacturer:
IR
Quantity:
21 600
Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in complementary general purpose amplifier applications.
Features:
D High DC Current Gain: h
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Emitter Leakage Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE249 (NPN) & NTE250 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
C
= 3500 Typ @ I
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
(BR)CEO
I
I
I
CEO
CER
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
J
thJC
CE
CB
CB
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V, R
= 5V, I
= 50V, I
= 100V, R
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10A
C
Test Conditions
E
= 0
B
BE
= 0
BE
= 0, Note 1
= 1k , T
= 1k
A
= +150 C
Min
100
–
–
–
–
Typ
–55 to +200 C
–55 to +200 C
–
–
–
–
–
0.857W/ C
Max Unit
3.0
1.0
5.0
5.0
1.17 C/W
–
500mA
150W
100V
100V
mA
mA
mA
mA
16A
V
5V
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NTE250 Summary of contents
Page 1
... NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector– ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE249 B NTE250 B = +25 C unless otherwise specified) A Symbol Test Conditions 3V 10A 10A 40mA CE(sat 16A 80mA 3V 10A ...