NTE175 NTE Electronics, Inc., NTE175 Datasheet
NTE175
Manufacturer Part Number
NTE175
Description
Transistor; NPN; 300 V (Max.); 500 V (Max.); 6 VDC (Max.); 2 A (Max.); 40; TO66
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Voltager
Datasheet
1.NTE175.pdf
(3 pages)
Specifications of NTE175
Complement To
PNP
Current, Base
1 A (Max.)
Current, Collector
2 A
Current, Collector Cutoff
1.0 mA (Max.) @ 450 V
Current, Gain
25 to 100
Device Dissipation
40 W
Frequency
15 MHz
Gain, Dc Current, Minimum
40
Material Type
Silicon
Package Type
TO-66
Polarity
NPN
Power Dissipation
35 W
Primary Type
Si
Resistance, Thermal, Junction To Case
5 °C/W
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
300 V
Voltage, Collector To Base
500 V
Voltage, Collector To Emitter
300 V
Voltage, Collector To Emitter, Saturation
0.75 V
Voltage, Emitter To Base
6 VDC
Voltage, Saturation, Collector To Emitter
0.75 V (Max.)
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–
speed switching and linear amplifier applications for high–voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D Collector–Emitter Sustaining Voltage:
D Second Breakdown Collector Current:
D Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Junction Temperature Range, T
Thermal Resistance, Junction to Case, R
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle
NTE38
NTE175
NTE38
NTE175
Continuous
Peak (Note 1)
Derate above 25 C
NTE38:
NTE175: V
NTE38
NTE175 I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
I
S/b
S/b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
CEO(sus)
High Voltage, Medium Power Switch
Silicon Complementary Transistors
= 875mA @ V
= 350mA @ V
EB
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE38 (PNP) & NTE175 (NPN)
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 350V @ I
= 300V @ I
CE
CE
D
stg
= 40V
= 100V
C
C
J
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 200mA
= 200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
–65 to +200 C
–65 to +200 C
0.2W/ C
5 C/W
350V
300V
400V
500V
6Vdc
35W
2A
5A
1A
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NTE175 Summary of contents
Page 1
... High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. ...
Page 2
... Collector–Emitter Saturation Voltage NTE38 NTE175 Base–Emitter Saturation Voltage NTE38 NTE175 Base–Emitter ON Voltage NTE175 Only Dynamic Characteristics Current Gain –Bandwidth Product NTE38 NTE175 Output Capacitance (NTE175 Only) Note 2. Pulse Test: Pulse Width | f Note test = +25 C unless otherwise specified) C Symbol Test Conditions ...
Page 3
... Electrical Characteristics (Cont’d): (T Parameter Second Breakdown Second Breakdown Collector Current NTE38 NTE175 Switching Characteristics NTE38 Rise Time Storage Time Fall Time NTE175 Rise Time Storage Time Fall Time .062 (1.57) .147 (3.75) Dia (2 Places) .145 (3.7) R Max = +25 C unless otherwise specified) C Symbol ...