IRFI840GPBF Vishay PCS, IRFI840GPBF Datasheet

IRFI840GPBF

Manufacturer Part Number

IRFI840GPBF

Description

MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.85Ohm; ID 4.6A; TO-220 Full-Pak; PD 40W

Manufacturer

Vishay PCS

Datasheet

1.IRFI840GPBF.pdf (2 pages)

Specifications of IRFI840GPBF

Current, Drain

4.6 A

Gate Charge, Total

67 nC

Package Type

TO-220 Full-Pak

Polarization

N-Channel

Power Dissipation

40 W

Resistance, Drain To Source On

0.85 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

55 ns

Time, Turn-on Delay

14 ns

Transconductance, Forward

3.7 S

Voltage, Breakdown, Drain To Source

500 V

Voltage, Forward, Diode

2 V

Voltage, Gate To Source

±20 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFI840GPBF

Manufacturer:

DIODES

Quantity:

80 000

Company:

H&T Electronics

Part Number:

IRFI840GPBF

Quantity:

2 650

Company:

H&T Electronics

Part Number:

IRFI840GPBF

Quantity:

70 000

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

TO-220 FULLPAK

(Max.) (nC)

(nC)

(V)

≤ 8.0 A, dI/dt ≤ 100 A/µs, V

= 50 V, starting T

(Ω)

= 25 °C, L = 31 mH, R

≤ V

= 10 V

, T

N-Channel MOSFET

Single

500

≤ 150 °C.

= 25 Ω, I

Power MOSFET

= 25 °C, unless otherwise noted

0.85

6-32 or M3 screw

at 10 V

= 4.6 A (see fig. 12).

for 10 s

= 25 °C

TO-220 FULLPAK

IRFI840GPbF

SiHFI840G-E3

IRFI840G

SiHFI840G

= 100 °C

= 25 °C

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. The isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

f = 60 Hz)

SYMBOL

dV/dt

, T

device

stg

IRFI840G, SiHFI840G

design,

- 55 to + 150

LIMIT

300

± 20

0.32

500

370

4.6

2.9

4.6

4.0

3.5

1.1

low

RMS

Vishay Siliconix

(t = 60 s,

on-resistance

lbf · in

UNIT

W/°C

N · m

RoHS*

V/ns

COMPLIANT

°C

Available

and

Related parts for IRFI840GPBF

IRFI840GPBF Summary of contents

Page 1

... S external heatsink. The isolation is equivalent to using a 100 N-Channel MOSFET micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip single screw fixing. TO-220 FULLPAK IRFI840GPbF SiHFI840G-E3 IRFI840G SiHFI840G = 25 °C, unless otherwise noted °C ...

Page 2

IRFI840G, SiHFI840G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain ...

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