NTE27C256-15D NTE Electronics, Inc., NTE27C256-15D Datasheet

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NTE27C256-15D

Manufacturer Part Number
NTE27C256-15D
Description
EPROM; 256 Kbit EPROM; 45 ns; 100 mus; 12.75 + 0.25 V; -2 to V; 30 mA (Max.)
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE27C256-15D

Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA
Current, Operating
30 mA (Read), 50 mA (Programming)
Current, Output, Leakage
±10
Current, Supply
30 mA (Max.)
Density
256K
Interface
Bus
Memory Type
EPROM
Organization
32K×8
Package Type
DIP
Temperature, Operating
-40 to +125 °C
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Time, Access
45 ns
Time, Programmable
100 μs
Voltage, Input, High
6 V (Read), 6.75 V (Programming)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V
Voltage, Input, Low Level
0.8 V (Max.)
Voltage, Output, High
2.4 V (TTL), 4.3 V CMOS (Read)
Voltage, Output, Low
0.4 V
Voltage, Programmable
12.75 ± 0.25 V
Voltage, Supply
-2 to +7 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microproces-
sor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,
NTE27C256−15D, and NTE27C256−70D have a transparent lid which allows the user to expose the
chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by follow-
ing the programming procedure. The NTE27C256−15P is suitable for applications where the content
is programmed only one time and erasure is not frequired.
Features:
D 5V 10% Supply Voltage in Read Operation
D Access Time: 45ns
D Low Power “CMOS” Consumption:
D Programming Voltage: 12.75V 0.25V
D Programming Time: 100 s/Word
Absolute Maximum Ratings: (Note 1)
Supply Voltage, V
Input or Output Voltage (Except A9, Note 2), V
A9 Voltage (Note 2), V
Program Supply Voltage, V
Ambient Operating Temperature Range, T
Temperature Under Bias Range, T
Storage Temperature Range, T
Note 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the
Note 2. Minimum DC voltage on the input or output is −0.5V with possible undershoot to −2.0V for
− Active Current 30mA at 5MHz
− Standby Current 100 A
table “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only and operation of the device at these or any other conditions above those
indicated in the Operating sections of this specification is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
a period less than 20ns. Maximum DC voltage on output is V
shoot to V
CC
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+2V for a period less than 20ns.
A9
NTE27C256−12D, NTE27C256−15D,
NTE27C256−15P, NTE27C256−70D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PP
256 Kbit (32Kb x 8) EPROM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
STG
BIAS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Integrated Circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
+0.5V with possible over-
−40 to +125 C
−50 to +125 C
−65 to +150 C
−2 to +13.5V
−2 to +14V
−2 to +7V
−2 to +7V

Related parts for NTE27C256-15D

NTE27C256-15D Summary of contents

Page 1

... NTE27C256−15P, NTE27C256−70D Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microproces- sor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D, NTE27C256−15D, and NTE27C256−70D have a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by follow- ing the programming procedure. The NTE27C256− ...

Page 2

... Standby Mode: The NTE27C256has a standby mode which reduces the supply current from 30mA to 100 A. The NTE27C256 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input. Two Line Output Control: Because EPROMs are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection ...

Page 3

... Read Mode AC Characteristics: (T Parameter Address Valid To Output Valid NTE27C256−70D NTE27C256−12D NTE27C256−15D, NTE27C256−15P Chip Enable Low To Output Valid NTE27C256−70D NTE27C256−12D NTE27C256−15D, NTE27C256−15P Note 4. V must be applied simultaneously with or before + otherwise specified) Symbol Test Conditions ...

Page 4

... NTE27C256−70D NTE27C256−12D NTE27C256−15D, NTE27C256−15P Chip Enable High To Output Hi−Z NTE27C256−70D NTE27C256−12D NTE27C256−15D, NTE27C256−15P Output Enable High To Output Hi−Z NTE27C256−70D NTE27C256−12D NTE27C256−15D, NTE27C256−15P Address Transition To Output Transition Note 3. Sampled only, not 100% tested. ...

Page 5

... Program Inhibit: Programming of multiple NTE27C256s in parallel with different data is also easily accomplished. Ex- cept for E, all like inputs including G of the parallel NTE27C256 may be common. A TTL low level pulse applied to an NTE27C256’s E input, with V E input inhibits the other NTE27C256s from being programmed. ...

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