NTE54 NTE Electronics, Inc., NTE54 Datasheet
NTE54
Manufacturer Part Number
NTE54
Description
Transistor; NPN; TO-220; 150 V; 150 V; 5 V; 8 A; 50 W; -65 to 150 degC; 40; PNP
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Driverr
Datasheet
1.NTE54.pdf
(2 pages)
Specifications of NTE54
Complement To
PNP
Current, Collector
8 A
Current, Collector Cutoff
0.1 mA
Current, Continuous Collector
8 A
Current, Emitter Cutoff
10 μA
Current, Gain
40
Device Dissipation
50 W
Frequency
30 MHz
Gain, Dc Current, Minimum
40
Material Type
Silicon
Package Type
TO-220
Polarity
NPN
Power Dissipation
2 W
Primary Type
Si
Resistance, Thermal, Junction To Case
2.5 °C/W
Temperature Range, Junction, Operating
-65 to 150 °C
Transistor Polarity
NPN
Voltage, Base To Emitter
1 V
Voltage, Breakdown, Collector To Emitter
150 V
Voltage, Collector To Base
150 V
Voltage, Collector To Emitter
150 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
0.5 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE541
Manufacturer:
Schurter
Quantity:
54
Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
D DC Current Gain Specified to 4A:
D Collector–Emitter Sustaining Voltage: V
D High Current Gain–Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
h
Continuous
Peak
Derate Above 25 C
Derate Above 25 C
FE
mentary pairs have their gain specification (h
=
=
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40 Min @ I
20 MIn @ I
High Frequency Driver for Audio Amplifier
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB)
C
C
A
CBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3A
= 4A
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE54 (NPN) & NTE55 (PNP)
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
T
thJA
= 30MHz Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150V Min
FE
) matched to within 10% of each other.
C
= 500mA
–65 to +150 C
–65 to +150 C
+62.5 C/W
0.016W/ C
0.04W/ C
+2.5 C/W
150V
150V
50W
16A
2W
5V
8A
Related parts for NTE54
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
nte quick cross for windows, cd, version 15
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Specifications: Manufacturer: NTE ; RoHS: Details
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
NTE829, Integrated Circuit Electronics Attenuator, 90dB @ 1kHz
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Transistor; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 15 A (Max.); 40 @ 4 V
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener, 00.0V, 1W, DO-41; Voltage, Zener; Zener Impedance, Maximum
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, PNP, GENERAL PURPOSE, PKG STYLE TO-92
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
CIRCUIT; TO-220; 40V; 0.01 %/V (TYP.) LINE REGULATION; 18 MV%/VO (TYP.)
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3.5-32DC; Vol-Rtg 0-100DC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener; 12 V @ 21 mA; 1 W @ +50C; DO-41; 700 Ohms @ 0.25 mA; +200; -65
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, N-CHANNEL; N-CHANNEL; 1.2 OHMS (TYP.); 60V; +/- 20V; 115MA DRAIN
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3-32DC; Vol-Rtg 80-530AC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Rectifier, Bridge; Silicon Bridge Rectifier; 200 V; 400 A; 25; Thru Hole Mount
Manufacturer:
NTE Electronics, Inc.
Datasheet:
NTE54 Summary of contents
Page 1
... Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features Current Gain Specified to 4A Min @ I FE ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain DC Current Gain Linearity Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current Gain–Bandwidth Product Note 2. Pulse ...