IRF9620PBF Vishay PCS, IRF9620PBF Datasheet

IRF9620PBF

Manufacturer Part Number

IRF9620PBF

Description

MOSFET, Power; P-Ch; VDSS -200V; RDS(ON) 1.5 Ohms; ID -3.5A; TO-220AB; PD 40W; VGS +/-2

Manufacturer

Vishay PCS

Datasheet

1.IRF9620PBF.pdf (2 pages)

Specifications of IRF9620PBF

Current, Drain

-3.5 A

Gate Charge, Total

22 nC

Package Type

TO-220AB

Polarization

P-Channel

Power Dissipation

40 W

Resistance, Drain To Source On

1.5 Ohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

20 ns

Time, Turn-on Delay

15 ns

Transconductance, Forward

1 S

Voltage, Breakdown, Drain To Source

-200 V

Voltage, Forward, Diode

-7 V

Voltage, Gate To Source

±20 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

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Company

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Quantity

Price

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Part Number:

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. I

c. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ - 3.5 A, dI/dt ≤ 95 A/µs, V

(Ω)

TO-220

≤ V

= - 10 V

, T

P-Channel MOSFET

Single

- 200

≤ 150 °C.

Power MOSFET

= 25 °C, unless otherwise noted

1.5

at - 10 V

6-32 or M3 screw

for 10 s

= 25 °C

TO-220

IRF9620PbF

SiHF9620-E3

IRF9620

SiHF9620

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

SYMBOL

dV/dt

device

, T

stg

design,

IRF9620, SiHF9620

- 55 to + 150

LIMIT

- 200

± 20

- 3.5

- 2.0

- 5.0

300

0.32

- 14

1.1

low

Vishay Siliconix

on-resistance

lbf · in

N · m

UNIT

W/°C

RoHS*

COMPLIANT

V/ns

°C

Available

and

Related parts for IRF9620PBF

IRF9620PBF Summary of contents

Page 1

... The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance D and low package cost of the TO-220 contribute to its wide P-Channel MOSFET acceptance throughout the industry. TO-220 IRF9620PbF SiHF9620-E3 IRF9620 SiHF9620 = 25 °C, unless otherwise noted °C ...

Page 2

IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

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