IRFP22N50APBF Vishay PCS, IRFP22N50APBF Datasheet
IRFP22N50APBF
Manufacturer Part Number
IRFP22N50APBF
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.23Ohm; ID 22A; TO-247AC; PD 277W; VGS +/-30V
Manufacturer
Vishay PCS
Datasheet
1.IRFP22N50APBF.pdf
(3 pages)
Specifications of IRFP22N50APBF
Current, Drain
22 A
Gate Charge, Total
120 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
277 W
Resistance, Drain To Source On
0.23 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
47 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
12 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP22N50APBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
Typical SMPS Topologies
l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
@T
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
Switch Mode Power Supply (SMPS)
UninterruptIble Power Supply
High Speed Power Switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Full Bridge Converters
Power Factor Correction Boost
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
300 (1.6mm from case )
HEXFET Power MOSFET
10 lbf•in (1.1N•m)
-55 to + 150
R
Max.
277
± 30
2.2
4.8
22
14
88
DS(on)
TO-247AC
0.23Ω
max
Units
W/°C
V/ns
22A
°C
W
A
V
I
D
1
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IRFP22N50APBF Summary of contents
Page 1
Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching l Lead-Free l Low Gate Charge Qg results in Simple l Drive Requirement Improved Gate, Avalanche and Dynamic l dv/dt Ruggedness Fully Characterized Capacitance and l ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
Page 3
B - 20.30 (.800) 19.70 (.775 14.80 (.583) 14.20 (.559) 2.40 (.094) 3X 2.00 (.079) 2X 5.45 (.215) 3.40 (.133) 2X 3.00 (.118) EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY ...