NTE2393 NTE Electronics, Inc., NTE2393 Datasheet
NTE2393
Manufacturer Part Number
NTE2393
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.7Ohm; ID 9A; PD 150W; VGS +/-20V; gFS 5Mhos
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2393.pdf
(3 pages)
Specifications of NTE2393
Application
Switching mode power supplies, uninterruptible power supplies and motor speed control
Channel Type
N-Channel
Current, Drain
9 A
Fall Time
30 nS
Operating And Storage Temperature
-65 to +150 °C
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
0.7 Ohm
Resistance, Thermal, Junction To Case
0.83 °C⁄W
Temperature, Operating, Maximum
+150 °C
Time, Rise
40 nS
Time, Turn-off Delay
130 ns
Time, Turn-on Delay
30 ns
Transconductance, Forward
5 Mhos
Voltage, Breakdown, Drain To Source
500 V
Voltage, Diode Forward
1.15 V (Max.)
Voltage, Drain To Gate
500 V
Voltage, Forward, Diode
1.15 V
Voltage, Gate To Source
±20 V
High Voltage
500 V for off-line SMPS
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE2393 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D High Voltage: 500V for Off–Line SMPS
D High Current: 9A for up to 350W SMPS
D Ultra Fast Switching for Operation at less than 100kHz
Industrial Applications:
D Switching Mode Power Supplies
D Motor Controls
Absolute Maximum Ratings:
Drain–Source Voltage (V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I
Pulsed Drain Current (Note 1), I
Clamped Drain Inductive Current (Note 1), I
Total Dissipation (T
Maximum Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering), T
Note 1. Pulse width limited by safe operating area.
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
GS
GS
GS
= 20k ), V
N–Channel Enhancement Mode,
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
DM
tot
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2393
MOSFET
DLM
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
–65 to +150 C
0.83 C/W
1.2W/ C
+150 C
+275 C
150W
500V
500V
5.6A
20V
36A
36A
9A
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NTE2393 Summary of contents
Page 1
... N–Channel Enhancement Mode, Description: The NTE2393 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current Gate–Body Leakage Current ON Characteristics (Note 2) Gate Threshold Voltage Static Drain–Source On Resistance Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Switching Characteristics ...
Page 3
D .591 .787 G D .215 (5.47) .126 (3.22) Dia S ...