DS1220AD-200+ Dallas Semiconductor, DS1220AD-200+ Datasheet - Page 4

• Manufacturer Part Number: DS1220AD-200+
• Description: RAM NV 16K-10% VTP-200NS
• Manufacturer: Dallas Semiconductor

Specifications of DS1220AD-200+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 16K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 2K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 200 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
Output High Z from
Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
SYMBOL
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
OEW
t
t
WR1
WR2
t
ACC
COE
DH1
DH2
AW
WC
WP
CO
OD
OH
RC
OE
DS
DS1220AD-150
DS1220AB-150
MIN
150
150
100
10
60
10
5 of 10
5
5
0
0
5
0
MAX
150
150
70
35
35
DS1220AD-200
DS1220AB-200
MIN
200
200
150
10
50
10
5
5
0
0
5
0
MAX
200
100
200
35
35
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1220AB/AD
NOTES
(cont’d)
12
13
12
13
5
5
3
5
4
4