MCP1700T-3302E/TT Microchip Technology Inc., MCP1700T-3302E/TT Datasheet - Page 3

• Manufacturer Part Number: MCP1700T-3302E/TT
• Description: LDO Regulator, CMOS, 3.3V 250mA Out, 1.2-6.0V In, SOT-23
• Manufacturer: Microchip Technology Inc.
• Type: Voltage Regulatorr

Specifications of MCP1700T-3302E/TT

• Current, Output: 250 mA
• Package Type: SOT-23
• Power Dissipation: 369.6 mW
• Regulation, Line: ±0.75 %/V
• Regulation, Load: ±1 %
• Regulator Type: Low Dropout
• Temperature, Operating, Range: -40 to +125 °C
• Time, Rise: 500 μs
• Voltage, Dropout: 178 mV
• Voltage, Input: 6 V
• Voltage, Noise: 3 μV/sqrt Hz
• Voltage, Output: 3.3 V
• Voltage, Supply, Rejection Ratio: 44 dB
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

MCP1700
TEMPERATURE SPECIFICATIONS
DS21826B-page 4
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for V
C
Boldface type applies for junction temperatures, T
Power Supply Ripple
Rejection Ratio
Thermal Shutdown Protection
Note 1:
Electrical Characteristics: Unless otherwise specified, all limits are established for V
C
Boldface type applies for junction temperatures, T
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, SOT-23
Thermal Resistance, SOT-89
Thermal Resistance, TO-92
OUT
OUT
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
= 1 µF (X7R), C
= 1 µF (X7R), C
2:
3:
4:
5:
6:
7:
Parameters
The minimum V
V
input voltage (V
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
temperature and the thermal resistance from junction to air (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
R
Parameters
is the nominal regulator output voltage. For example: V
OUT
= (V
IN
IN
= 1 µF (X7R), T
= 1 µF (X7R), T
OUT-HIGH
R
IN
IN
+ 1V differential applied.
= V
must meet two conditions: V
OUT-LOW
R
- V
PSRR
+ 1.0V); I
Sym
T
OUT-LOW
SD
A
A
= +25°C.
= +25°C.
= lowest voltage measured over the temperature range.
OUT
Sym
) *10
θ
θ
θ
T
T
T
JA
JA
JA
A
A
A
= 100 µA.
Min
J
J
—
—
6
(Note 6) of -40°C to +125°C.
(Note 1) of -40°C to +125°C.
/ (V
R
Min
-40
-40
-65
—
—
—
—
* ΔTemperature), V
IN
Typ
140
≥ 2.3V and V
44
131.9
Typ
336
230
52
R
Max
—
—
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
IN
+125
+125
+150
Max
≥ (V
OUT-HIGH
A
—
—
—
—
A
, T
, T
R
J
J
, θ
Units
, θ
+ 3.0%) +V
dB
°C
JA
Units
JA
°C/W
°C/W
°C/W
°C/W
IN
IN
= highest voltage measured over the
). Exceeding the maximum allowable power
°C
°C
°C
). Exceeding the maximum allowable power
= V
= V
R
R
f = 100 Hz, C
V
V
V
Minimum Trace Width Single Layer
Board
Typical FR4 4-layer Application
Typical, 1 square inch of copper
EIA/JEDEC JESD51-751-7
4-Layer Board
+ 1, I
+ 1, I
DROPOUT
INAC
R
IN
= 1.2V
= V
© 2007 Microchip Technology Inc.
LOAD
LOAD
= 100 mV pk-pk, C
R
OUT
+ 1, I
.
.
= 100 µA,
= 100 µA,
Conditions
Conditions
OUT
L
= 100 µA
= 1 µF, I
IN
L
= 50 mA,
= 0 µF,