NTE2347 NTE Electronics, Inc., NTE2347 Datasheet
NTE2347
Manufacturer Part Number
NTE2347
Description
Bipolar Transistor Package/Case:TO-39; Current Rating:5A; Voltage Rating:80V
Manufacturer
NTE Electronics, Inc.
Type
General Purpose, Powerr
Datasheet
1.NTE2347.pdf
(2 pages)
Specifications of NTE2347
Current, Collector
5 A
Current, Gain
40 to 120
Frequency
50 MHz
Package Type
TO-39
Polarity
NPN
Power Dissipation
7 W
Primary Type
Si
Resistance, Thermal, Junction To Case
25 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
150 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
6 V
Description:
The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Absolute Maximum Ratings:
Collector–Base Voltage (I
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Collector Current, I
Total Power Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Duration = 300 s, Duty Cycle = 1.5%.
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector–Base Capacitance
Turn–On Time
Storage Time
Fall Time
T
T
T
A
C
C
+25 C
+25 C
+100 C
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
J
E
General Purpose, Medium Power
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tot
= 0), V
B
= 0), V
stg
C
EBO
Silicon NPN Transistor
= +25 C unless otherwise specified)
CBO
V
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
CEO(sus)
C
CEO
I
CE(sat)
BE(sat)
I
h
CES
EBO
t
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
t
on
FE
t
T
s
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
NTE2347
V
V
V
V
I
I
I
I
I
I
V
V
V
C
C
C
C
C
C
CE
CE
CE
EB
CB
CC
CC
thJA
= 50mA, I
= 5A, I
= 5A, I
= 2A, V
= 2A, V
= 500mA, V
= 6V, I
= 150V, V
= 100V, V
= 100V, V
= 10V, I
= 20V, I
= 20V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
B
CE
CE
Test Conditions
C
= 500mA, Note 1
= 500mA, Note 1
C
E
B
C
= 2V, T
= 0
= 2V, Note 1
= 5A, I
= 0, f = 1MHz
= 0, Note 1
= 500mA, I
BE
BE
BE
CE
= 0
= 0
= 0, T
= 5V
C
B1
= –55 C, Note 1
= –I
C
= +150 C
B1
B2
= 500mA
= 500mA
Min
80
40
15
50
–
–
–
–
–
–
–
–
–
–
Typ
–65 to +200 C
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max Unit
0.35
0.35
100
120
1.6
0.3
80
175 C/W
1
1
1
–
1
–
–
25 C/W
+200 C
150V
MHz
mA
mA
pF
80V
V
V
V
1W
7W
4W
A
A
s
s
s
6V
5A
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NTE2347 Summary of contents
Page 1
... General Purpose, Medium Power Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers. Absolute Maximum Ratings: Collector–Base Voltage (I E Collector–Emitter Voltage (I Emitter–Base Voltage (I = 0), V ...
Page 2
Max .500 (12.7) Min Emitter 45 .031 (.793) .370 (9.39) Dia Max .355 (9.03) Dia Max .018 (0.45) Base Collector/Case ...