NTE160

Manufacturer Part NumberNTE160
DescriptionTransistor; RF-IF; PNP; 20 V; 10 mA; 60 mW; 400 degC/W; 0.3 V; 50 (Typ.); TO-72
ManufacturerNTE Electronics, Inc.
TypeIF Amplifier, Oscillator, RF
NTE160 datasheet
 

Specifications of NTE160

Amplifier TypeRF-IFCurrent, Collector10 mA
Current, Gain42Frequency700 MHz
Package TypeTO-72PolarityPNP
Power Dissipation60 mWPrimary TypeGe
Resistance, Thermal, Junction To Case400 °C/WTemperature, Operating, Maximum90 °C
Transistor PolarityPNPVoltage, Breakdown, Collector To Emitter16 V
Voltage, Collector To Emitter16 VVoltage, Emitter To Base0.3 V
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Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream-
plifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
Collector–Emitter Voltage, (I
Emitter–Base Voltage (I
= 0), V
C
Collector Current, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Total Power Dissipation (T
A
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Reverse Capacitance
Noise Figure
Power Gain
NTE160
Germanium PNP Transistor
RF–IF Amp, FM Mixer OSC
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BE
CES
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
= +45 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
= +25 C unless otherwise specified)
C
Symbol
Test Conditions
I
V
= –20V, V
= 0
CES
CE
BE
I
V
= –15V, I
= 0
CEO
CE
B
I
V
= –0.3V, I
= 0
EBO
EB
C
V
I
= –2mA, V
= –10V
BE
C
CE
I
= –5mA, V
= –5V
C
CE
h
I
= –2mA, V
= –10V
FE
C
CE
I
= –5mA, V
= –5V
C
CE
f
I
= –2mA, V
= –10V, f = 100MHz
T
C
CE
–C
I
= –2mA, V
= –10V, f = 450kHz
re
C
CE
NF
I
= –2mA, V
= –10V, R
C
CE
f = 800MHz
G
I
= –2mA, V
= –10V, R
pb
C
CE
f = 800MHz
–30 to +75 C
400 C/W max
750 C/W max
Min
Typ
Max
–8
–500
–100
–350
–400
50
42
700
0.23
= 60
5
6
g
= 2k
11
14
L
20V
16V
0.3V
10mA
60mW
+90 C
Unit
A
A
A
mV
mV
MHz
pF
dB
dB

NTE160 Summary of contents

  • Page 1

    ... Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream- plifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage (V Collector–Emitter Voltage, (I Emitter–Base Voltage ( Collector Current Total Power Dissipation (T ...

  • Page 2

    Min Emitter 45 .040 (1.02) .220 (5.58) Dia Max .185 (4.7) Dia Max .030 (.762) Max .018 (0.45) Base Collector Case ...