NTE311 NTE Electronics, Inc., NTE311 Datasheet
NTE311
Manufacturer Part Number
NTE311
Description
Transistor; NPN; TO39; VCEO=30V; VCBO=55V; VEBO= 3.5V; IC=400 mA; PD=5 W
Manufacturer
NTE Electronics, Inc.
Type
Driver, Frequency Multiplier, VHF/UHFr
Datasheet
1.NTE311.pdf
(2 pages)
Specifications of NTE311
Complement To
PNP
Current, Collector
400 mA
Current, Collector Cutoff
0.02 mA
Current, Continuous Collector
400 mA
Current, Gain
25 to 200
Device Dissipation
50 W
Frequency
800 MHz
Gain, Dc Current, Maximum
200
Gain, Dc Current, Minimum
25
Material Type
Silicon
Package Type
TO-39
Polarity
NPN
Power Dissipation
5 W
Primary Type
Si
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
55 V
Voltage, Breakdown, Emitter To Base
3.5 V
Voltage, Collector To Base
55 V
Voltage, Collector To Emitter
30 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
3.5 V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collectore–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Emitter Sustaining Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Small–Signal Characteristics
Current–Gain Bandwidth Product
Output Capacitance
Functional Test
Amplifier Power Gain
Collector Efficiency
Derate Above 25 C
Parameter
Frequency Multiplier, Driver, VHF/UHF
EBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
CEO
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CER(sus)
CEO(sus)
(BR)EBO
I
I
CE(sat)
C
I
G
h
CEO
CEX
EBO
f
obo
h
FE
T
pe
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
V
I
I
I
V
V
V
NTE311
C
C
F
C
C
C
CE
CE
CE
BE
CB
CC
CC
= 100 A, I
= 5mA, R
= 5mA, I
= 50mA, V
= 100mA, I
= 50mA, V
= 30V, V
= 3.5V, I
= 28V, I
= 55V, V
= 28V, I
= 28V, P
= 20V, P
Test Conditions
B
BE
B
E
C
BE
C
OUT
OUT
= 0
BE
CE
CE
B
= 0
= 0, f = 1MHz
= 0
= 0
= 10
= 20mAQ
= –1.5V, T
= –1.5V
= 5V
= 15V, f = 200MHz
= 1W, f = 400MHz
= 1W, f = 400MHz
C
= +200 C
Min
800
3.5
55
30
––
25
10
45
–
–
–
–
–
Typ
–65 to +200 C
–
–
–
–
–
–
–
–
–
–
–
–
–
28.6mW/ C
Max
0.02
200
5.0
0.1
0.1
1.0
3.0
–
–
–
–
–
–
400mA
MHz
Unit
3.5V
mA
mA
mA
mA
dB
pF
%
30V
55V
V
V
V
V
–
5W
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NTE311 Summary of contents
Page 1
... Current–Gain Bandwidth Product Output Capacitance Functional Test Amplifier Power Gain Collector Efficiency NTE311 Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .500 (12.7) Min Emitter 45 .031 (.793) .370 (9.39) Dia Max .355 (9.03) Dia Max .018 (0.45) Base Collector/Case ...