NTE2310 NTE Electronics, Inc., NTE2310 Datasheet
NTE2310
Manufacturer Part Number
NTE2310
Description
Transistor, NPN; TO-218; NPN; 450 V; 8 A; 125 W; 0 to 175 degC; 1.2 degC/W
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Switchr
Datasheet
1.NTE2310.pdf
(2 pages)
Specifications of NTE2310
Current, Collector
8 A
Current, Gain
10
Device Dissipation
125 W
Package Type
TO-218
Polarity
NPN
Power Dissipation
125 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.2 °C/W
Temperature, Junction, Operating
0 to 175 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
450 V
Voltage, Collector To Emitter
450 V
Voltage, Collector To Emitter, Saturation
1.5 V
Description:
The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for
use in high voltage, fast switching industrial applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
Collector–Emitter Voltage (I
Collector Current, I
Base Current, I
Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Charactertistics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 1.5%.
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Turn–On Time
Storage Time
Fall Time
Continuous
Peak (t
Continuous
Peak (t
Parameter
p
p
B
2ms)
2ms)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage, High Speed Switch
B
BE
= 0), V
stg
= 0), V
C
Silicon NPN Transistor
= +25 C unless otherwise specified)
V
D
Symbol
V
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
I
CE(sat)
BE(sat)
CEO
I
CES
EBO
t
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
on
t
s
f
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
NTE2310
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
I
I
I
C
C
C
C
CE
CE
EB
= 100mA, L = 25mH, Note 1
= 6A, I
= 6A, I
= 6A, I
= 1000V, V
= 9V, I
= 1000V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
B
B1
C
= 1.2A, Note 1
= 1.2A, Note 1
= 1.2A, I
= 0
BE
BE
= 0, T
= 0
B2
= 1.2A
C
= +125 C
Min
400
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–65 to +175 C
Max
1.5
1.5
0.8
10
–
1
3
1
4
1.2 C/W
+175 C
1000V
125W
Unit
450V
mA
mA
mA
V
V
V
20A
s
s
s
8A
4A
6A
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NTE2310 Summary of contents
Page 1
... High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings: Collector–Emitter Voltage (V Collector–Emitter Voltage (I Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
C .156 (3.96) Dia .055 (1.4) .216 (5.45) .060 (1.52) .173 (4.4) .550 (13.97) .430 (10.92) .500 (12.7) Min NOTE: Dotted line indicates that case may have square corners .015 (0.39) ...