VF20100SG-E3/45 General Semiconductor / Vishay, VF20100SG-E3/45 Datasheet
VF20100SG-E3/45
Manufacturer Part Number
VF20100SG-E3/45
Description
RECTIFIER; ITO-220AB; 100V; 20A; TRENCH MOS THROUGH HOLE TRENCH SCHOTTKY
Manufacturer
General Semiconductor / Vishay
Datasheet
1.VF20100SG-E345.pdf
(3 pages)
Specifications of VF20100SG-E3/45
Current, Forward
20 A
Current, Reverse
13 mA
Current, Surge
150 A
Package Type
ITO-220AB
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
4 °C/W
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-40 to +150 °C
Voltage, Forward
0.75 V
Voltage, Reverse
100 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
PIN 1
PIN 3
V
TO-220AB
V20100SG
F
at I
T
V
I
J
I
F(AV)
FSM
High-Voltage Trench MOS Barrier Schottky Rectifier
RRM
F
max.
= 20 A
CASE
PIN 2
K
PIN 1
PIN 3
1
TO-262AA
2
TMBS
VI20100SG
3
A
®
= 25 °C unless otherwise noted)
PIN 2
K
PIN 1
PIN 3
1
2
ITO-220AB
VF20100SG
Ultra Low V
3
150 °C
0.75 V
100 V
150 A
20 A
PIN 2
1
2
SYMBOL
3
V20100SG, VF20100SG & VI20100SG
T
F
V
J
I
I
F(AV)
, T
V
= 0.50 V at I
FSM
RRM
AC
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB and TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
V20100SG
losses
and WEEE 2002/96/EC
F
= 5 A
Vishay General Semiconductor
- 40 to + 150
VF20100SG
1500
100
150
20
VI20100SG
UNIT
°C
V
A
A
V
1
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VF20100SG-E3/45 Summary of contents
Page 1
... Maximum average forward rectified current (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Isolation voltage (ITO-220AB only) from terminal to heatsink min Operating junction and storage temperature range V20100SG, VF20100SG & VI20100SG Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...
Page 2
... V20100SG, VF20100SG & VI20100SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage (1) Instantaneous forward voltage (2) Reverse current Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE ...
Page 3
... V20100SG, VF20100SG & VI20100SG Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...