NTE937M NTE Electronics, Inc., NTE937M Datasheet - Page 2

• Manufacturer Part Number: NTE937M
• Description: Amplifier, Operational; +/- 18V; 5 mA (Typ.) Supply; +/- 30V; DIP
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE937M

• Amplifier Type: High Voltage
• Bandwidth: 20 MHz
• Common Mode Rejection Ratio: 80
• Current, Input Bias: 200 pA
• Current, Input Offset: 50 pA
• Current, Supply: 5 mA
• Impedance, Thermal: 155 °C/W
• Package Type: DIP-8
• Power Dissipation: 500 mW
• Resistance, Input: 10^12 Ohms
• Slew Rate: 50
• Temperature, Operating, Range: +100 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: -12 to +15.1 V (Common-Mode)
• Voltage, Noise: 15 nV/sqrt Hz
• Voltage, Offset: 3 mV
• Voltage, Output, High: +13 V
• Voltage, Output, Low: -13 V
• Voltage, Supply: ±15 V

DC Electrical Characteristics: (T
DC Electrical Characteristics: (V
Note 3. The temperature coeficient of the adjust input offset voltage changes only a small amount
Note 4. The input bias currents are junction leakage currents which approximately double for every
Note 5. Supply Voltage Rejection is measured for both supply magnitudes increasing or decreasing
Supply Current
Input Offset Voltage
Average TC of Input Offset Voltage
Change in Average TC with V
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage Gain
Output Voltage Swing
Input Common–Mode Voltage Range
Common–Mode Rejection Ratio
Supply Voltage Rejection Ratio
Adjust
(0.5 V/ C typically) for each mV of adjustment from its original unadjusted value. Common–
mode rejection and open loop voltage gain are also unaffected by offset adjustment.
10 C increase in the junction temperature, T
bias currents measured are correlated to junction temperature. In normal operation the junc-
tion temperature rises above the ambient temperature as a result of internal power dissipa-
tion, P
Use of a heat sink is recommended if input bias current is to be kept to a minimum.
simultaneously, in accordance with common practice.
Parameter
Parameter
d
. T
J
= T
A
+ R
OS
thJC
specified)
P
d
A
S
Symbol
Symbol
TC/ V
where R
CMRR
PSRR
= +25C, V
V
= 15V, 0
A
V
V
R
I
I
OS
V
VOL
CC
OS
I
CM
OS
B
IN
O
/ T R
OS
thJC
R
Over Temperature
R
T
T
T
T
T
T
R
Over Temperature
R
R
Note 5
A
S
J
J
J
J
J
S
S
S
L
L
L
= +25 C, Note 4
= +25 C, Note 4
= +25 C
= +25 C, V
= 2k
= 10k
= 2k
= 15V unless otherwise specified)
= 50 , T
= 50
= 50 , Note 3
is the thermal resistance from junction to ambient.
T
T
T
Test Conditions
Test Conditions
A
HIGH
HIGH
J
. Due to limited production test time, the input
+70 C, T
A
= +25 C
O
= 10V,
HIGH
= +70 C unles otherwise
Min
Min
25
15
–
–
–
–
–
–
–
–
–
–
12
10
10
–
–
+15.1
10
Typ
Typ
200
–12
0.5
30
80
80
5
3
–
5
3
–
–
–
13
12
12
Max
Max
200
100
100
10
10
13
50
–
–
2
8
–
–
–
–
–
–
V/mV
V/mV
Unit
Unit
mA
mV
mV
V/ C
V/ C
pA
nA
pA
nA
dB
dB
V
V
V