NTE272 NTE Electronics, Inc., NTE272 Datasheet - Page 2

• Manufacturer Part Number: NTE272
• Description: Transistor, NPN; TO202; PNP Bipolar; 40 V (Max.); 50 V (Max.); 12 V (Max.)
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifier, Powerr

Specifications of NTE272

• Current, Collector: 2 A (Max.)
• Current, Collector Cutoff: 100 nA (Max.) @ 30 V
• Current, Gain: 12000
• Current, Output: 2 A
• Package Type: TO-202
• Polarity: NPN
• Power Dissipation: 1 W
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 125
• Resistance, Thermal, Junction To Case: 12.5 °C⁄W (Max.)
• Temperature Range, Junction, Operating: -55 to +150 °C
• Thermal Resistance, Junction To Ambient: 125 °C⁄W (Max.)
• Transistor Polarity: PNP Bipolar
• Voltage, Collector To Base: 50 V (Max.)
• Voltage, Collector To Emitter: 40 V (Max.)
• Voltage, Collector To Emitter, Saturation: 1.2 V
• Voltage, Emitter To Base: 12 V (Max.)
• Voltage, Input: 12 V
• Voltage, Output: 40 V
• Voltage, Saturation, Collector To Emitter: 1.2 V (Typ.) @ 1 A

Electrical Characteristics: (T
Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
Uniwatt darlington transistors can be used in any
number of low power applications, such as relay
drivers, motor control and as general purpose
amplifiers. As an audio amplifier these devices,
when used as a complementary pair, can drive
3.5 watts into a 3.2ohm speaker using a 14 volt
supply with less than one per cent distortion. Be-
cause of the high gain the base drive requirement
is as low as 1mA in this application. They are also
useful as power drivers for high current applica-
tion such as voltage regulators.
OFF Characteristics
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 3)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter ON Voltage
Dynamic Characteristics
Small−Signal Current Gain
Collector−Base Capacitance
Parameter
B
B
NTE272 Schematic
NTE273 Schematic
A
= +25°C unless otherwise specified)
V
V
V
Symbol
V
V
V
C
E
C
E
(BR)CBO
(BR)EBO
(BR)CES
BE(ON)
I
I
CE(sat)
BE(sat)
|h
h
C
CBO
EBO
FE
fe
cb
|
I
I
I
V
V
I
I
I
I
I
I
I
f = 100MHz, Note 2
V
C
C
E
C
C
C
C
C
C
C
CB
EB
CB
= 10µA, I
= 100µA, V
= 100µA, I
= 200mA, V
= 500mA, V
= 1A, V
= 1A, I
= 1A, I
= 1A, V
= 200mA, V
= 10V, I
= 30V, I
= 10V, I
Test Conditions
B
B
CE
CE
= 2mA
= 2mA
C
E
C
E
E
= 5V
= 5V
= 0
BE
= 0
= 0
= 0, f = 1MHz
CE
CE
CE
= 0
(5.55)
.218
= 0
= 5V
= 5V
= 5V,
.100 (2.54)
(4.06)
(5.55)
(12.0)
.160
.218
.475
Min
Collector Connected to Tab
E B C
25,000
15,000
4,000
Min
1.0
TO202N
40
50
12
−
−
−
−
−
−
.200 (5.08)
65,000 150,000
35,000
12,000
.280 (7.25) Max
1.85
Typ
.380 (9.65) Max
1.2
1.7
3.2
2.5
.128 (3.28) Dia
(25.3)
−
−
−
−
−
.995
.050 (1.27)
Max
100
100
1.5
2.0
2.0
6.0
−
−
−
−
−
−
Unit
nA
nA
pF
V
V
V
V
V
V