DS1217M-1-25 Dallas Semiconductor, DS1217M-1-25 Datasheet - Page 3

• Manufacturer Part Number: DS1217M-1-25
• Description: Nonvolatile Read/Write Cartridge, 128KBx8
• Manufacturer: Dallas Semiconductor

Specifications of DS1217M-1-25

• Capacitance, Input: 100 pF
• Capacitance, Output: 100 pF
• Current, Input, Leakage: ±60 μA
• Current, Operating: 50 mA
• Current, Output, Leakage: ±10
• Data Retention: 5 yrs.
• Density: 4M
• Interface: Parallel Bus
• Memory Type: Non-Volatile RAM
• Organization: 64K×8 to 512K×8
• Package Type: Cartridge
• Temperature, Operating: 0 to +70 °C
• Time, Access: 250 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V

AC ELECTRICAL CHARACTERISTICS
(V
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High-Z from
Deselection
Output Hold from Address
Change
Read Recovery Time
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time from WE
Note 1:
Note 2:
Note 3:
CC
= 5V ±10%, T
PARAMETER
These parameters are sampled with a 5pF load and are not 100% tested.
t
going high.
t
WP
DH
, t
is specified as the logical AND of CE and WE t
DS
are measured form the earlier of CE or WE going high.
A
= 0°C to +70°C.)
SYMBOL
t
t
t
t
t
t
t
t
ODW
t
t
t
t
OEW
t
COE
t
t
t
ACC
WC
WP
AW
WR
RC
OE
CO
OD
OH
RR
DH
DS
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 3)
WP
CONDITIONS
is measured from the latter of CE or WE going low to the earlier of CE or WE
3 of 8
MIN
250
250
170
100
40
20
20
5
5
0
5
TYP
MAX
250
125
210
125
100
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns