SK 80GB063 Sindopower / Semikron, SK 80GB063 Datasheet
SK 80GB063
Manufacturer Part Number
SK 80GB063
Description
DUAL IGBT MODULE, 600V, SEMITOP3
Manufacturer
Sindopower / Semikron
Type
Standardr
Datasheet
1.SK_80GB063.pdf
(3 pages)
Specifications of SK 80GB063
Capacitance, Gate
4.3 nF
Current, Collector
81 A
Energy Rating
7 mJ
Package Type
T26
Polarity
N-Channel
Primary Type
Si
Transistor Type
IGBT
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.1 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
SK80GB063
IGBT Module
SK80GB063
Preliminary Data
Features
Typical Applications
1
SEMITOP
GB
®
3
Absolute Maximum Ratings
Symbol
IGBT
Inverse Diode
Module
Characteristics
Symbol
IGBT
17-11-2006 DIL
Conditions
Conditions
min.
Values
typ.
© by SEMIKRON
max.
Units
Units
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SK 80GB063 Summary of contents
Page 1
SK80GB063 ® SEMITOP 3 IGBT Module SK80GB063 Preliminary Data Features Typical Applications GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Module Characteristics Symbol Conditions IGBT 17-11-2006 DIL Values Units min. typ. max. Units © by SEMIKRON ...
Page 2
SK80GB063 ® SEMITOP 3 IGBT Module SK80GB063 Preliminary Data Features Typical Applications GB 2 Characteristics Symbol Conditions Inverse Diode This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but ...
Page 3
SK80GB063 UL recognized file 5 17-11-2006 DIL no 532 © by SEMIKRON ...