MAX1586AETM Maxim Integrated Products, MAX1586AETM Datasheet
MAX1586AETM
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MAX1586AETM Summary of contents
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... Optimized for XScale Processors ♦ Backup-Battery Input ♦ 1MHz PWM Switching Allows Small External Components ♦ Tiny 6mm x 6mm, 40-Pin and 7mm x 7mm, 48-Pin Thin QFN Packages PART MAX1586AETM MAX1586BETM MAX1586CETM MAX1587AETL MAX1587CETL Pin Configurations and Selector Guide appear at end of data sheet. ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ABSOLUTE MAXIMUM RATINGS IN, IN45, IN6, MR, LBO, DBO, RSO, POK, SCL, SDA, BKBT, V7, SLP, SRAD, PWM3 to GND...............-0.3V to +6V REF, CC_, ON_, FB_, DBI, LBI, V1, V2, RAMP, ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI are +25°C.) A PARAMETER p-Channel On-Resistance n-Channel On-Resistance Current-Sense Transresistance p-Channel Current-Limit ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI are +25°C.) A PARAMETER p-Channel On-Resistance n-Channel On-Resistance Current-Sense Transresistance p-Channel Current-Limit ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI are +25°C.) A PARAMETER LBI Threshold (Falling) DBI Threshold (Falling) RSO Threshold ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ELECTRICAL CHARACTERISTICS (V = 3.6V 3.0V 1.1V BKBT LBI PARAMETER PV1, PV2, PV3, SLPIN, IN Supply Voltage Range IN45, IN6 Supply Voltage Range IN Undervoltage-Lockout ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI PARAMETER SYNCHRONOUS-BUCK PWM REG3 REG3 Output Voltage Accuracy p-Channel On-Resistance n-Channel On-Resistance p-Channel Current-Limit Threshold ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI PARAMETER DBI Threshold (Falling) RSO Threshold (Falling) RSO Deassert Delay LBI Input Bias Current DBI ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones ELECTRICAL CHARACTERISTICS (continued) Note 1: Dropout voltage is guaranteed by the p-channel switch resistance and assumes a maximum inductor resistance of 45mΩ. Note 2: The PWM-skip-mode transition has approximately 10mA of ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones (Circuit of Figure 3.6V +25°C, unless otherwise noted REG1 3.3V OUTPUT EFFICIENCY vs. LOAD CURRENT 100 4.0V ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones (Circuit of Figure 3.6V +25°C, unless otherwise noted DROPOUT VOLTAGE vs. LOAD CURRENT 300 250 200 150 100 REG1 3.3V OUTPUT ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones (Circuit of Figure 3.6V +25°C, unless otherwise noted REG3 SWITCHING WAVEFORMS WITH 250mA LOAD V3 V LX3 I L3 400ns/div REG3 FORCED-PWM SWITCHING WAVEFORMS ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones (Circuit of Figure 3.6V +25°C, unless otherwise noted REG1 LOAD-TRANSIENT RESPONSE 200μs/div REG3 LOAD-TRANSIENT RESPONSE 200μs/div REG3 OUTPUT VOLTAGE CHANGING FROM 1.3V TO 1.0V ...
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... PWM3 or connect high for forced-PWM operation at all loads for V3 only. LBO 15 — Low-Battery Output. Open-drain output that goes low when V Dual Mode is a trademark of Maxim Integrated Products, Inc. 14 ______________________________________________________________________________________ PMICs with Q FUNCTION when ON1 is low out of regulation. BKBT Pin Description ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones PIN NAME MAX MAX 1586 1587 REG2 Power Input. Bypass to PG2 with a 4.7µF or greater low-ESR capacitor. PV1, PV2, PV3, and IN must 16 13 PV2 connect together externally. ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones PIN NAME MAX MAX 1586 1587 Serial Address Bit. SRAD allows the serial address of the MAX1586/MAX1587 to be changed in case SRAD conflicts with another serial device. ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones BATT MAIN BATT DBI (3.15V OR ADJ) LBI (3.6V OR ADJ) REF REF 1.25V LBO OPEN-DRAIN LOW-BATT OUT DBO OPEN-DRAIN DEAD-BATT OUT TO nBATT_FAULT ON1 FROM CPU SYS_EN ON2 SLP RUN ...
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... VCC_IO in Intel documentation. See Figure 1. V1 and V2 (VCC_IO, VCC_MEM) Step-Down DC-DC Converters 1MHz current-mode step-down converter. The V1 output voltage can be preset to 3.3V or adjusted using a resistor voltage-divider. V1 supplies loads up to 1300mA. Idle Mode is a trademark of Maxim Integrated Products, Inc. 18 ______________________________________________________________________________________ PMICs with also a 1MHz current-mode step-down converter. ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones V3 (VCC_CORE) Step-Down DC-DC Converter 1MHz current-mode step-down converter. The MAX1586A, MAX1586B, and MAX1587A supply loads up to 500mA from V3 while the MAX1586C and MAX1587C supply loads ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones Voltage Monitors, Reset, and Undervoltage-Lockout Functions Undervoltage Lockout When the input voltage is below 2.35V (typ), an under- voltage-lockout (UVLO) circuit disables the IC. The inputs remain high impedance while in ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones MAIN BATTERY 334kΩ 500kΩ DBI (1.232V THRESHOLD) R5 LBI (1.00V THRESHOLD) 200kΩ R7 200kΩ Figure 4. Setting the Low-Battery and Dead-Battery Thresholds with Separate Resistor-Dividers. The values shown ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones Table 2. V3 and V6 Serial Programming Codes PROG PROG ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones LOW HIGH SCL SDA t t HD:STA SU:STA A = START CONDITION B = MSB OF ADDRESS CLOCKED INTO SLAVE C = LSB OF ADDRESS CLOCKED INTO ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones The LSB of the address word is the read/write (R/W) bit. R/W indicates whether the master is writing or reading (RD write, RD read). The MAX1586/ MAX1587 ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones source and reduces switching noise in the controller. The impedance of the input capacitor at the switching frequency should be less than that of the input source so high-frequency switching currents ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones MAIN BATT TO BATT TO V1 C19 R19 R20 0.1μF 1MΩ 1MΩ LOW-BATT WARNING TO CPU nBATT_FAULT FROM CPU SYS_EN RUN SLEEP Li+ C25 BACKUP 1μF BATTERY V7, VCC_BATT (ALWAYS ON) ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones We choose 22µF. Recalculate R using the selected OUT LOAD C Note that the pole cancellation does not have to be exact. ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smart Phones MAIN IN POWER 4.7μF D1 1N4148 BKBT V7 1μF Figure 8. BKBT connection when no backup battery is used alternate backup scheme, not involving the MAX1586/MAX1587, is used. ...
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... LB1 RSO 30 CC1 2 29 SRAD FB1 3 PV3 28 4 BKBT LX3 PG3 MAX1586AETM SLPIN 7 MAX1586BETM IN45 MAX1586CETM V4 23 FB2 9 ON45 22 CC2 10 ON2 21 11 POK SCL 7mm × 7mm (For the latest package outline information and land patterns www.maxim-ic.com/packages.) PACKAGE TYPE ...
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... Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 30 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2009 Maxim Integrated Products ...