HFA08TB60SPBF Vishay PCS, HFA08TB60SPBF Datasheet
HFA08TB60SPBF
Manufacturer Part Number
HFA08TB60SPBF
Description
600V 8A HEXFRED DISCRETE DIODE IN A D-PAK PACKAGE
Manufacturer
Vishay PCS
Datasheet
1.HFA08TB60SPBF.pdf
(4 pages)
Specifications of HFA08TB60SPBF
Capacitance, Junction
10 pF
Configuration
Common Cathode
Current, Forward
8 A
Current, Surge
60 A
Package Type
TO-220AC
Power Dissipation
36 W
Primary Type
Rectifier
Resistance, Thermal, Junction To Case
3.5 K/W
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
18 ns
Voltage, Forward
1.7 V
Voltage, Reverse
600 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
* Pb containing terminations are not RoHS compliant, exemptions may apply
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
V
dI
F
T
(rec)M
at 8 A at 25 °C
J
Q
t
rr
(maximum)
rr
(typical)
I
I
(typical)
/dt (typical)
F(AV)
RRM
V
R
Cathode
TO-220AC
1
cathode
Base
Ultrafast Soft Recovery Diode, 8 A
2
Anode
3
240 A/µs
150 °C
600 V
65 nC
18 ns
1.7 V
5.0 A
8 A
SYMBOL
T
HEXFRED
J
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
T
T
T
C
C
C
TEST CONDITIONS
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 8 A continuous current, the HFA08TB60
is especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED HFA08TB60 is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
®
RRM
rr
®
Vishay High Power Products
product line features extremely low values of
- 55 to + 150
RRM
VALUES
600
HFA08TB60PbF
60
24
36
14
) and does not exhibit any
8
b
portion of recovery. The
UNITS
°C
W
V
A
RoHS*
COMPLIANT
Available
1
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HFA08TB60SPBF Summary of contents
Page 1
Ultrafast Soft Recovery Diode Base cathode Cathode Anode TO-220AC PRODUCT SUMMARY ° F(AV) t (typical (maximum (typical /dt (typical) ...
Page 2
HFA08TB60PbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C Series inductance L S DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER ...
Page 3
DIMENSIONS in millimeters and inches 2 Conforms to JEDEC outline D PAK (SMD-220) (2)( ( Detail ( 0.010 M M ...
Page 4
TAPE AND REEL INFORMATION in millimeters (inches) 2.0 ± 0.1 See note (5) Ø 1.55 ± 0.05 Y Ø 1.6 ± 0.1 R 0.3 TYP. Y 16.00 ± 0.1 Notes (1) 10 sprocket hole pitch cumulative tolerance ± 0.02 (2) ...