VS-ETH1506FP-M3 Vishay, VS-ETH1506FP-M3 Datasheet - Page 5

• Manufacturer Part Number: VS-ETH1506FP-M3
• Description: DIODE, HFAST REC, 600V, 15A, TO220FP
• Manufacturer: Vishay

Specifications of VS-ETH1506FP-M3

• Diode Type: Fast Recovery
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 15A
• Forward Voltage Vf Max: 2.45V
• Reverse Recovery Time Trr Max: 36ns
• Rohs Compliant: Yes

Document Number: 93522
Revision: 11-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
90
80
70
60
50
40
30
20
10
Fig. 9 - Typical Reverse Recovery vs. dI
100
typical value
If = 15 A, 25° C
di
F
[e-mail], [e-mail],
If = 15 A, 125° C
/dt (A/µs )
For technical questions within your region, please contact one of the following:
(1) dI
(2) I
(3) t
0
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
I
F
F
- reverse recovery time measured
/dt - rate of change of current
- peak reverse recovery current
F
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Hyperfast Rectifier, 15 A FRED Pt
Fig. 11 - Reverse Recovery Parameter Test Circuit
RRM
This datasheet is subject to change without notice.
1000
and 0.50 I
F
/dt
(1)
adjust
dI
F
/dt
dI
F
/dt
RRM
L = 70 μH
G
VS-ETH1506-M3, VS-ETH1506FP-M3
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
RRM
t
D.U.T.
/dt - peak rate of change of
b
600
500
400
300
200
100
RRM
[e-mail]
dI
0
Fig. 10 - Typical Stored Charge vs. dI
0.5 I
Q
100
(rec)M
rr
Q
=
RRM
b
rr
/dt
t
portion of t
(4)
rr
®
x I
(5)
2
RRM
If = 15 A, 125° C
Vishay Semiconductors
di
rr
F
/dt (A/µs )
If = 15 A, 25° C
rr
typical value
www.vishay.com/doc?91000
1000
www.vishay.com
F
/dt
5