CMSD6263C LEADFREE Central Semiconductor, CMSD6263C LEADFREE Datasheet

Schottky (Diodes & Rectifiers) Dual Common Cathode

CMSD6263C LEADFREE

Manufacturer Part Number

CMSD6263C LEADFREE

Description

Schottky (Diodes & Rectifiers) Dual Common Cathode

Manufacturer

Central Semiconductor

Datasheet

1.CMSD2004S.pdf (2 pages)

Specifications of CMSD6263C LEADFREE

Product

Schottky Diodes

Peak Reverse Voltage

70 V

Forward Continuous Current

0.015 A

Max Surge Current

0.05 A

Configuration

Dual Common Cathode

Recovery Time

5 ns

Forward Voltage Drop

0.41 V at 0.001 A

Maximum Reverse Leakage Current

0.2 uA at 50 V

Maximum Power Dissipation

275 mW

Operating Temperature Range

- 65 C to + 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-323

Lead Free Status / Rohs Status

Details

Current page: 1 of 2
Download datasheet (467Kb)

MAXIMUM RATINGS: (T A =25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Peak Repetitive Reverse Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE: (T A =25°C unless otherwise noted)

SYMBOL

I R

BV R

V F

C T

t rr

SILICON SWITCHING DIODES

SURFACE MOUNT

DUAL, IN SERIES

SOT-323 CASE

CMSD2004S

TEST CONDITIONS

V R =240V

V R =240V, T A =150°C

I R =100μA

I F =100mA

V R =0, f=1.0MHz

I F =I R =30mA, I rr =3.0mA, R L =100Ω

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMSD2004S

type is a dual, in series silicon switching diode

manufactured by the epitaxial planar process, designed

for applications requiring high voltage capability.

MARKING CODE: B6D

SYMBOL

T J , T stg

V RRM

I RRM

I FRM

I FSM

Θ JA

MIN

300

V R

P D

I F

-65 to +150

MAX

300

200

225

625

275

455

100

4.0

1.0

5.0

w w w. c e n t r a l s e m i . c o m

R6 (8-February 2010)

UNITS

°C/W

μA

°C

Related parts for CMSD6263C LEADFREE

CMSD6263C LEADFREE Summary of contents

Page 1

... I R =100μ =100mA =0, f=1.0MHz =30mA =3.0mA =100Ω DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING CODE: B6D SYMBOL V R 300 V RRM 300 ...

Page 2

CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: B6D ...

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