RF MOSFET Power 5-175MHz 300Watts 50Volt Gain 14dB

MRF151G

Manufacturer Part NumberMRF151G
DescriptionRF MOSFET Power 5-175MHz 300Watts 50Volt Gain 14dB
ManufacturerM/A-COM Technology
MRF151G datasheet
 

Specifications of MRF151G

ConfigurationSingleDrain-source Breakdown Voltage125 V
Gate-source Breakdown Voltage40 VContinuous Drain Current16 A
Power Dissipation300 WMaximum Operating Temperature+ 150 C
Package / CaseCase 375-04Minimum Operating Temperature- 65 C
Transistor PolarityN-ChannelLead Free Status / Rohs Status Details
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MRF151G
Part Status: Released
RF Power Field-Effect Transistor
300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Features
Guaranteed Performance at 175 MHz, 50 V:
• Output Power — 300 W
• Gain — 14 dB (16 dB Typ)
• Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
Description and Applications
Designed for broadband commercial and military
applications at frequencies to 175 MHz. The high
power, high gain and broadband performance of this
device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Products
Package Outline
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
RoHS Compliant

MRF151G Summary of contents

  • Page 1

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET Features Guaranteed Performance at 175 MHz • Output Power — 300 W • Gain — (16 dB Typ) • Efficiency — 50% • Low Thermal Resistance — 0.35°C/W • Ruggedness Tested at Rated Output Power • ...

  • Page 2

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

  • Page 3

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

  • Page 4

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

  • Page 5

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

  • Page 6

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

  • Page 7

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

  • Page 8

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

  • Page 9

    ... MRF151G Part Status: Released RF Power Field-Effect Transistor 300 175 MHz N-Channel Broadband MOSFET 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...