SST12LP18E-QX8E Microchip Technology, SST12LP18E-QX8E Datasheet

WLAN 11b/g/n PA (Low Current) 8 XSON 2x2x0.45 Mm T/R

SST12LP18E-QX8E

Manufacturer Part Number
SST12LP18E-QX8E
Description
WLAN 11b/g/n PA (Low Current) 8 XSON 2x2x0.45 Mm T/R
Manufacturer
Microchip Technology
Type
Power Amplifierr
Series
-r
Datasheet

Specifications of SST12LP18E-QX8E

Operating Frequency
2.4 GHz to 2.5 GHz
P1db
26 dBm
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Package / Case
XSON-8
Minimum Operating Temperature
0 C
Technology
InGaP/GaAs HBT
Featured Product
SST12LP17E/18E RF Power Amplifiers
Current - Supply
-
Frequency
2.4GHz ~ 2.5GHz
Gain
25dB
Noise Figure
-
Rf Type
802.11b/g/n
Test Frequency
2.4GHz
Voltage - Supply
-
Lead Free Status / Rohs Status
 Details
©2011 Silicon Storage Technology, Inc.
A Microchip Technology Company
Features
• High gain:
• High linear output power (at 3.3V):
• High power-added efficiency/Low operating cur-
• Low shut-down current (~2 µA)
• Low Voltage operation down to 2.7V bias.
• Limited variation over temperature
• Temperature and load insensitive on-chip power
• Packages available
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)DS75008
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
rent for both 802.11b/g/n applications
detector
– Typically 25 dB gain across 2.4~2.5 GHz
– Low battery voltage operation: V
– >26 dBm P1dB
– ~2.5% added EVM up to 18 dBm for
– Meets 802.11g OFDM ACPR requirement up to 21.5
– Meets 802.11b ACPR requirement up to 22.5 dBm
– ~32% @ P
– ~36% @ P
– ~1 dB power variation between -40°C to +85°C
– ~2 dB gain variation between -40°C to +85°C
– 8-contact XSON – 2mm x 2mm x 0.45mm
54 Mbps 802.11g signal
dBm
>15 dB dynamic range
OUT
OUT
The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency Power Ampli-
fier designed in compliance with IEEE 802.11b/g/n applications. It typically provides
25 dB gain with 32% power-added efficiency. The SST12LP18E has excellent linear-
ity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP18E is ideal for
embedded applications because it provides linear power evan at low-battery volt-
ages. With a reference voltage as low as 2.7V, the SST12LP18E will operate from
-20°C to +85°C and is offered in a 8-contact XSON package.
= 22.5 dBm for 802.11b
= 21.5 dBm for 802.11g
2.4 GHz High-Power, High-Gain Power Amplifier
REF
as low as 2.7V.
www.microchip.com
Block Diagram
Product Ordering
Valid combinations for SST12LP18E
SST12LP18E Evaluation Kits
Note: Valid combinations are those products in mass produc-
SST12LP18E-QX8E
SST12LP18E-QX8E-K
tion or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations
and to determine availability of new combinations.
RF
IN
V
V
CCB
CC1
Bias Circuit
V
V
CC2
REF
SST12LP18E
DET
DS75008A
75008 B1.0
Product Brief
RF
OUT
05/11

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SST12LP18E-QX8E Summary of contents

Page 1

... REF RF Product Ordering Valid combinations for SST12LP18E SST12LP18E-QX8E SST12LP18E Evaluation Kits SST12LP18E-QX8E-K Note: Valid combinations are those products in mass produc- tion or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. www.microchip.com SST12LP18E ...

Page 2

... SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office(s) location and information, please see www.microchip.com. ©2011 Silicon Storage Technology, Inc. Description Initial release of Product Brief Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com 2 SST12LP18E Product Brief Date May 2011 DS75008A 05/11 ...

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