VSMY7850X01-GS08 Vishay, VSMY7850X01-GS08 Datasheet

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VSMY7850X01-GS08

Manufacturer Part Number
VSMY7850X01-GS08
Description
High Power Infrared Emitting Diode, 850 Nm
Manufacturer
Vishay
Datasheet

Specifications of VSMY7850X01-GS08

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
DESCRIPTION
VSMY7852X01 is an infrared, 850 nm emitting diode based
on surface emitter technology with high radiant power and
high speed, molded in low thermal resistance Little Star
package. A 20 mil chip provides outstanding low forward
voltage and allows DC operation of the device up to 250 mA.
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
Document Number: 81146
Rev. 1.0, 31-Mar-11
20783
20783
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
COMPONENT
VSMY7852X01
ORDERING INFORMATION
ORDERING CODE
VSMY7852X01-GS08
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/pin
High Power Infrared Emitting Diode,
850 nm, Surface Emitter Technology
I
e
For technical questions, contact:
(mW/sr)
Acc. J-STD-051, soldered on PCB
42
Acc. figure 7, J-STD-20
Tape and reel
PACKAGING
t
p
This document is subject to change without notice.
TEST CONDITION
/T = 0.5, t
amb
t
p
= 100 μs
= 25 °C, unless otherwise specified)
p
 100 μs
 (deg)
± 60
emittertechsupport@vishay.com
MOQ: 2000 pcs, 2000 pcs/reel
FFEATURES
• Package type: surface mount
• Package form: Little Star
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength: 
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 60°
• Low forward voltage
• Designed for high drive currents: up to 250 mA DC and up
• Low thermal resistance: R
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
AAPPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Driver assistance systems
• Machine vision IR data transmission
to 1.5 A pulses
accordance to WEEE 2002/96/EC
SYMBOL
REMARKS
R
T
I
T
I
T
FSM
V
P
amb
thJP
I
FM
T
stg
sd
F
R
V
j
p
850
(nm)
p
Vishay Semiconductors
= 850 nm
- 40 to + 100
- 40 to + 100
®
VALUE
thJP
250
500
500
125
260
1.5
15
5
VSMY7852X01
= 15 K/W
www.vishay.com/doc?91000
PACKAGE FORM
Little Star
t
www.vishay.com
r
15
(ns)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
A
1

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VSMY7850X01-GS08 Summary of contents

Page 1

... 100 μ FSM amb T stg Acc. figure 7, J-STD- thJP emittertechsupport@vishay.com This document is subject to change without notice. VSMY7852X01 Vishay Semiconductors ® = 850 K/W thJP  (nm) t (ns 850 15 PACKAGE FORM Little Star VALUE UNIT 5 V 250 mA 500 mA 1.5 A 500 mW 125 ° ...

Page 2

... VSMY7852X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology 600 500 400 300 200 K/W thJP 100 Ambient Temperature (°C) 21779 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb PARAMETER Forward voltage Temperature coefficient Reverse current ...

Page 3

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C, unless otherwise specified) 1.0 0.9 0.8 0.7 2 8013 Fig Relative Radiant Intensity vs. Angular Displacement 10 950 emittertechsupport@vishay.com This document is subject to change without notice. VSMY7852X01 Vishay Semiconductors 0° 10° 20° 30° 40° 50° 60° 70° 80° 0.6 0.4 0.2 0 www.vishay.com www ...

Page 4

... VSMY7852X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology TAPING DIMENSIONS in millimeters 20846 www.vishay.com For technical questions, contact: 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT emittertechsupport@vishay.com This document is subject to change without notice. ...

Page 5

... Surface Emitter Technology PACKAGE DIMENISONS in millimeters 20848 Document Number: 81146 For technical questions, contact: Rev. 1.0, 31-Mar-11 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT emittertechsupport@vishay.com This document is subject to change without notice. VSMY7852X01 Vishay Semiconductors www.vishay.com 5 www.vishay.com/doc?91000 ...

Page 6

... VSMY7852X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology SOLDER PROFILE 300 255 °C 250 240 °C 217 °C 200 max 150 max. 100 s max. 120 s 100 50 max. ramp up 3 °C/s max. ramp down 6 °C 100 150 200 ...

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