CMLM8205 Central Semiconductor, CMLM8205 Datasheet

MOSFET Small Signal P-CHANNEL MOSFET SCHOTTKY DIODE

CMLM8205

Manufacturer Part Number
CMLM8205
Description
MOSFET Small Signal P-CHANNEL MOSFET SCHOTTKY DIODE
Manufacturer
Central Semiconductor
Datasheet

Specifications of CMLM8205

Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.5 Ohms
Forward Transconductance Gfs (max / Min)
200 ms
Drain-source Breakdown Voltage
50 V
Continuous Drain Current
280 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-563
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details
MAXIMUM RATINGS - CASE: (T A =25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1: (T A =25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
MAXIMUM RATINGS - D1: (T A =25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp =8.0ms
ELECTRICAL CHARACTERISTICS - Q1: (T A =25°C unless otherwise noted)
SYMBOL
I GSSF , I GSSR
I DSS
I DSS
I D(ON)
BV DSS
V GS(th)
APPLICATIONS:
• DC / DC Converters
• Battery Powered Portable Equipment
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
LOW V F SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
P-CHANNEL MOSFET AND
SURFACE MOUNT
SOT-563 CASE
CMLM8205
TEST CONDITIONS
V GS =20V, V DS =0
V DS =50V, V GS =0
V DS =50V, V GS =0, T J =125°C
V GS =10V, V DS =10V
V GS =0, I D =10μA
V DS =V GS , I D =250μA
SYMBOL
SYMBOL
SYMBOL
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM8205 is a
Multi Discrete Module™ consisting of a single
P-Channel Enhancement-mode MOSFET and a
Low V F Schottky diode packaged in a space saving
PICOmini™ SOT-563 surface mount case. This
device is designed for small signal general purpose
applications where size and operational efficiency are
prime requirements.
MARKING CODE: C85
FEATURES:
• Low r DS(on) Transistor (3.0Ω MAX @ V GS =5.0V)
• Low V F Shottky Diode (0.47V MAX @ 0.5A)
T J , T stg
V RRM
I FRM
I FSM
V DG
V DS
V GS
Θ JA
I DM
I SM
MIN
P D
P D
P D
1.0
50
50
I D
I S
I F
2
2
-65 to +150
MAX
350
300
150
357
280
280
500
100
500
1.5
1.5
3.5
1.0
2.5
50
50
20
40
10
2
w w w. c e n t r a l s e m i . c o m
R1 (20-January 2010)
UNITS
UNITS
UNITS
UNITS
°C/W
mW
mW
mW
mA
mA
mA
mA
nA
μA
μA
°C
V
V
V
A
A
V
A
A
V
V

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CMLM8205 Summary of contents

Page 1

... FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm ™ DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module™ consisting of a single P-Channel Enhancement-mode MOSFET and a Low V F Schottky diode packaged in a space saving PICOmini™ ...

Page 2

... CMLM8205 MULTI DISCRETE MODULE SURFACE MOUNT P-CHANNEL MOSFET AND LOW V F SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS V DS(ON =10V =500mA V DS(ON =5.0V =50mA = =115mA r DS(ON =10V =500mA r DS(ON =10V =500mA =125°C r DS(ON =5.0V =50mA r DS(ON =5.0V =50mA =125°C ...

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