SI4501DY-T1-E3 Vishay, SI4501DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4501DY-T1-E3
• Description: MOSFET Power 30/8 9/6.2A
• Manufacturer: Vishay

Specifications of SI4501DY-T1-E3

• Configuration: Dual Common Quad Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 30 V, 8 V
• Gate-source Breakdown Voltage: +/- 20 V, +/- 8 V
• Continuous Drain Current: 9 A, - 6.2 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si9706DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
0.001
0.01
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.1
1
0.1
1
0.01
0
C
C
Open
SR
load
Rise Time vs. SR Capacitor Value
Rise Time vs. Load Capacitance
= 33 nF
Rise Time Delay, t
= 0 pF
40
C
1
C
load
C
SR
SR
− Load Capacitance (mF)
− Capacitor Value (nF)
− Capacitor Value (mF)
Switch 1
Switch 2
Switch 1
10
80
0.1
Switch 2
rd
Switch 2
vs. C
100
Switch 1
120
SR
1000
160
1
10000
1000
100
100
100
0.1
10
10
80
60
40
20
1
1
0
0.01
0.1
0
C
C
Open
SR
load
Fall Time vs. Load Capacitance
Fall Time vs. SR Capacitor Value
= 33 nF
Fall Time Delay, t
= 0 pF
40
1
C
C
C
load
SR
SR
Switch 1
− Load Capacitance (mF)
− Capacitor Value (mF)
− Capacitor Value (nF)
Switch 1
0.1
10
80
Switch 2
fd
S-40127—Rev. G, 16-Feb-04
Switch 2
vs. C
Document Number: 70010
Switch 2
100
120
SR
Switch 1
1000
160
1