IRFP360 IXYS, IRFP360 Datasheet
IRFP360
Manufacturer Part Number
IRFP360
Description
MOSFET Power 23 Amps 400V 0.2 Rds
Manufacturer
IXYS
Datasheet
1.IRFP360.pdf
(2 pages)
Specifications of IRFP360
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AD
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
400
Id(cont), Tc=25°c, (a)
23
Rds(on), Max, Tj=25°c, (?)
0.2
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
-
Trr, Typ, (ns)
420
Pd, (w)
300
Rthjc, Max, (k/w)
0.45
Package Style
TO-247
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP360
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFP360
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP360LC
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFP360LCPBF
Manufacturer:
FSC
Quantity:
7 000
Part Number:
IRFP360PBF
Manufacturer:
IR
Quantity:
20 000
MegaMOS
N-Channel Enhancement Mode
Preliminary data
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
M
Weight
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
This data reflects the objective technical specification and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
AR
GSS
D25
D100
DSS
GS
GSM
AR
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 µs, duty cycle d
S
J
J
C
C
C
C
J
C
GS
GS
GS
GS
DS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 100°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150°C, R
DM
TM
GS
DSS
, di/dt
,
I
FET
D
D
DC
D
= 250 µA
= 250 µA
= 14A
, V
G
= 2
DS
= 0
GS
= 1.0 M
T
T
(T
J
J
= 25°C
= 125°C
J
= 25 C, unless otherwise specified)
JM
2
400
min.
2
-55 ... +150
-55 ... +150
Characteristic Values
1.13/10
Maximum Ratings
IRFP 360
typ.
400
400
±20
±30
300
150
300
23
14
92
23
30
5
6
max.
0.20
100
250
Nm/lb.in.
25
4
V/ns
mJ
µA
°C
°C
°C
°C
nA
µA
W
V
V
V
V
A
A
A
A
V
V
g
V
I
R
TO-247 AD
G = Gate,
S = Source,
Features
Applications
Advantages
D25
DC choppers
Space savings
High power density
Easy to mount with 1 screw (isolated
mounting screw hole)
Fast switching times
International standard packages
Low R
Rugged polysilicon gate cell structure
High commuting dv/dt rating
Motor Controls
Switch-mode and resonant-mode
Uninterruptable power supplies (UPS)
DSS
DS(on)
DS (on)
= 400 V
= 23 A
= 0.20
HDMOS
D = Drain,
TAB = Drain
TM
process
95509A (4/95)
D (TAB)
1 - 2
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IRFP360 Summary of contents
Page 1
... GS D Pulse test, t 300 µs, duty cycle d This data reflects the objective technical specification and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IRFP 360 Maximum Ratings 400 = 1 ...
Page 2
... Ratings and Characteristics (T = 25°C unless otherwise specified) J Min. Typ. Max 1.8 420 630 5.6 8.4 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IRFP 360 TO-247 AD Outline ...