SUP18N15-95 Vishay, SUP18N15-95 Datasheet - Page 3

• Manufacturer Part Number: SUP18N15-95
• Description: MOSFET Power 150V 18A 88W
• Manufacturer: Vishay

Specifications of SUP18N15-95

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71642
S-71662-Rev. B, 06-Aug-07
1500
1200
900
600
300
25
20
15
10
40
32
24
16
5
0
8
0
0
0
0
0
C
2
V
20
5
rss
DS
V
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
Transconductance
- Drain-to-Source Voltage (V)
I
D
= 10 thru 6 V
Capacitance
- Drain Current (A)
4
10
40
C
3 V
oss
6
15
60
C
T
iss
C
= - 55 °C
8
20
80
25 °C
125 °C
5 V
4 V
10
100
25
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
25
20
15
10
8
4
0
5
0
0
0
0
V
I
D
DS
= 15 A
On-Resistance vs. Drain Current
= 75 V
1
8
5
V
GS
Transfer Characteristics
Q
V
GS
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
2
= 6 V
Gate Charge
- Drain Current (A)
16
10
SUP18N15-95
T
25 °C
C
Vishay Siliconix
3
= 125 °C
24
15
4
V
www.vishay.com
GS
= 10 V
32
20
5
- 55 °C
40
25
6
3