BC807-25WT1G ON Semiconductor, BC807-25WT1G Datasheet - Page 2

• Manufacturer Part Number: BC807-25WT1G
• Description: TRANS PNP GP 500MA 45V SC-70
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of BC807-25WT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (max): -
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 100MHz
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
BC807−25WT1G
BC807−25WT3G
BC807−40WT1G
BC807−40WT3G
(I
(V
(I
(V
(V
(I
(I
(I
(I
(I
(V
C
E
C
C
C
C
C
EB
CB
CB
CB
= −1.0 mA)
= −10 mA)
= −100 mA, V
= −500 mA, V
= −500 mA, I
= −500 mA, I
= −10 mA, V
= 0, I
= −20 V)
= −20 V, T
= −10 V, f = 1.0 MHz)
C
= −10 mA)
Device
J
CE
B
B
CE
CE
= 150°C)
= −50 mA)
= −1.0 V)
= −5.0 Vdc, f = 100 MHz)
= −1.0 V)
= −1.0 V)
Characteristic
(T
Specific Marking
A
= 25°C unless otherwise noted.)
5B
5C
http://onsemi.com
BC807−25
BC807−40
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SC−70
SC−70
SC−70
SC−70
V
V
V
Symbol
V
V
(BR)CEO
(BR)CES
(BR)EBO
CE(sat)
C
I
BE(on)
CBO
h
f
obo
FE
T
−5.0
Min
−45
−50
160
250
100
40
−
−
−
−
−
Typ
10,000/Tape & Reel
10,000/Tape & Reel
10
−
−
−
−
−
−
−
−
−
−
−
3000/Tape & Reel
3000/Tape & Reel
Shipping
−100
Max
−5.0
−0.7
−1.2
400
600
−
−
−
−
−
−
†
MHz
Unit
nA
mA
pF
V
V
V
−
V
V