MJB5742T4G ON Semiconductor, MJB5742T4G Datasheet
MJB5742T4G
Specifications of MJB5742T4G
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MJB5742T4G Summary of contents
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... R 62.5 _C/W qJA T 275 _C L MJB5742T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com POWER DARLINGTON TRANSISTORS 8 AMPERES, 400 VOLTS 100 WATTS ≈ ...
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ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
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SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 100 T , CASE TEMPERATURE (°C) C Figure 1. Power Derating 2000 150°C 1000 25°C - 55°C 100 ...
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Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 1N493 0.001 2N222 W 1 DUTY CYCLE ≤ 10 ≤ ...
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FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor ...
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... −T− SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE VIEW W− ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...