DTA123JEBTL Rohm Semiconductor, DTA123JEBTL Datasheet
DTA123JEBTL
Manufacturer Part Number
DTA123JEBTL
Description
TRAN DIGITL PNP 50V 100MA EMT3F
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet
1.DTA123JEBTL.pdf
(3 pages)
Specifications of DTA123JEBTL
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DTA123JEBTL
Manufacturer:
ROHM
Quantity:
24 000
-100mA / -50V Digital transistors
(with built-in resistors)
Inverter, Interface, Driver
1) Built-in bias resistors enable the configuration of
2) The bias resistors consist of thin-film resistors
3) Only the on/off conditions need to be set for
PNP silicon epitaxial planar transistor type
(Resistor built-in)
○
c
Part No.
DTA123JEB
www.rohm.com
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
Applications
Features
Structure
Packaging specifications
Absolute maximum ratings (Ta=25°C)
an inverter circuit without connecting external
input resistors (see equivalent circuit).
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
operation, making the device design easy.
DTA123JEB
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Package
Packaging type
Code
Basic ordering unit (pieces)
Symbol
Ic(max)
Tstg
V
V
P
Io
Tj
CC
IN
D
∗1
∗2
EMT3F
Taping
3000
TL
−55 to +150
−12 to +5
Limits
−100
−100
−50
150
150
Unit
mW
mA
mA
°C
°C
V
V
1/2
R
(1) IN
(2) GND
(3) OUT
IN
Dimensions (Unit : mm)
Equivalent circuit
1
=2.2kΩ, R
EMT3F
IN
R
1
R
2
2
=47kΩ
GND(+)
0.26
Abbreviated symbol : E32
(3)
0.5 0.5
(1)
OUT
OUT
GND(+)
1.0
1.6
(2)
Each lead has same dimensions
0.13
0.7
2009.03 - Rev.B
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DTA123JEBTL Summary of contents
Page 1
Digital transistors (with built-in resistors) DTA123JEB Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film ...
Page 2
DTA123JEB Electrical characteristics (Ta=25°C) Parameter Symbol Min. − V I(off) Input voltage −1.1 V I(on) − Output voltage V O(on) − Input current I I − Output current I O(off) DC current gain ∗ − Transition frequency ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...