BD10KA5FP-E2 Rohm Semiconductor, BD10KA5FP-E2 Datasheet - Page 7

• Manufacturer Part Number: BD10KA5FP-E2
• Description: IC REG LDO 1V 0.5A TO252-3
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of BD10KA5FP-E2

• Regulator Topology: Positive Fixed
• Voltage - Output: 1V
• Voltage - Input: 2.3 V ~ 5.5 V
• Voltage - Dropout (typical): -
• Number Of Regulators: 1
• Current - Output: 500mA (Max)
• Current - Limit (min): -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

●Other Caution
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BD□□KA5,BD□□KA5W Series,BD00KA5W Series
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○Protection Circuits
○Thermal Shutdown Circuit (Thermal Protection)
○Reverse Current
○This IC is BI-CMOS IC that has a P-board (substrate) and P+ isolation between each element, as shown in Fig.28. A P-N
Over-current Protection Circuit
This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage. As
shown in Fig. 20-22, this must be used within the range of acceptable loss, but if the acceptable loss is continuously
exceeded, the chip temperature Tj increases, causing the thermal shutdown circuit to operate. When the thermal
shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the
chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to Figs.12 for the temperatures
at which the temperature protection circuit operates).
There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to
avoid leaving the IC in the overloaded state.
In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode
be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.27).
junction is formed between this P-layer and the N-layer of each element, and the P-N junction operates as :
Parasitic elements are structurally inevitable in the IC. The operation of parasitic elements induces mutual interference
between circuits, causing malfunctions and eventually the destruction of the IC. Take precaution as not to use the IC in
ways that would cause parasitic elements to operate. For example, applying a voltage that is lower than the GND
(P-board) to the input terminal.
A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when
there are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current
is restricted and does not latch even when a large current momentarily flows through the system with a high-capacitance
capacitor. However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents,
it is not suitable for continuous operation or transient use. Please be aware when creating thermal designs that the
over-current protection circuit has negative current capacity characteristics with regard to temperature.
- a parasitic diode when the electric potential relationship is GND> Terminal A, GND> Terminal B, or
- a parasitic transistor when the electric potential relationship is Terminal B > GND> Terminal A.
N
(Pin B)
Parasitic element
or transistor
P+
O
Transistor (NPN)
B
E
N
N
P
GND
P
P+
N
GND
(Pin A)
Fig. 28 : Basic structure example
P
N
P+
Fig.27 : Bypass diode
CTL
Vcc
Resistor
N
P
GND
GND
7/9
Reverse current
Parasitic element
P+
OUT
N
(Pin B)
(Pin A)
B
C
E
GND
GND
Parasitic element
Parasitic element
or transistor
Technical Note
2009.04 - Rev.A